Exciton dissociation in two-dimensional transition metal dichalcogenides: Excited states and substrate effects

Tao Zhu,Chenhang Zheng,Lei Xu,Ming Yang
DOI: https://doi.org/10.1103/PhysRevB.110.155416
2024-10-10
Abstract:Exciton dissociation plays a crucial role in the performance of optoelectronic devices based on two-dimensional (2D) transition metal dichalcogenides (TMDs). In this work, we investigate the effect of an in-plane electric field on the exciton resonance states in MX$_2$ (M = Mo, W; X = S, Se) monolayers and few-layers using the complex coordinate rotation method and the Lagrange-Laguerre polynomial expansion of the wave function. The exciton properties are well described within the Mott-Wannier model incorporating the nonlocal Keldysh potential. Our calculations reveal that an electric field effectively dissociates excitons, with excited states being more easily dissociated than the ground state. The critical field for exciton dissociation is found to be smaller in WX$_2$ monolayers compared to MoX$_2$ monolayers due to the smaller exciton reduced mass. Furthermore, the presence of a dielectric substrate and an increase in the number of MX$_2$ layers enhance the exciton susceptibility to the electric field, lowering the critical field for dissociation. The dependence of exciton properties on the number of MX$_2$ layers can be well described by power functions. These findings provide valuable insights for the design and optimization of high-performance optoelectronic devices based on 2D TMDs.
Materials Science
What problem does this paper attempt to address?
The paper aims to investigate the issue of exciton dissociation in two-dimensional transition metal dichalcogenides (TMDs), particularly under the influence of an external in-plane electric field. Specifically, the authors study the resonant states of excitons in monolayer and multilayer MX₂ (M = Mo, W; X = S, Se) materials under different electric field strengths using the complex coordinate rotation method and the technique of expanding the wave function with Laguerre polynomials. This method overcomes the limitations of previous perturbation methods and allows for precise calculation of exciton energy levels from the ground state to the excited state. The study found that an external electric field can effectively promote exciton dissociation, with excited states being more prone to dissociation than ground states. Additionally, the critical dissociation electric field varies among different materials, with the critical field for WX₂ monolayers being smaller than that for MoX₂ monolayers, due to the former having a smaller exciton reduced mass. The research also shows that the presence of a dielectric substrate enhances the sensitivity of excitons to the electric field, thereby reducing the critical field required for exciton dissociation. These results have important implications for the design and optimization of high-performance optoelectronic devices based on TMDs.