Abstract:Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Ion implantation, an industry standard for atom placement in materials, requires augmentation for single ion capability including a method for detecting a single ion arrival. Integrating single ion detection techniques with the single donor device construction region allows single ion arrival to be assured. Improving detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility in lay-out integration with the active region of the single donor device construction zone by allowing ion sensing at potentially greater distances. Using a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector we have demonstrated 100% detection efficiency at a distance of >75 microm from the center of the collecting junction. This detection efficiency is achieved with sensitivity to approximately 600 or fewer electron-hole pairs produced by the implanted ion. Ion detectors with this sensitivity and integrated with a thin dielectric, for example a 5 nm gate oxide, using low energy Sb implantation would have an end of range straggle of <2.5 nm. Significant reduction in false count probability is, furthermore, achieved by modifying the ion beam set-up to allow for cryogenic operation of the SIGMA detector. Using a detection window of 230 ns at 1 Hz, the probability of a false count was measured as approximately 10(-1) and 10(-4) for operation temperatures of approximately 300 K and approximately 77 K, respectively. Low temperature operation and reduced false, 'dark', counts are critical to achieving high confidence in single ion arrival. For the device performance in this work, the confidence is calculated as a probability of >98% for counting one and only one ion for a false count probability of 10(-4) at an average ion number per gated window of 0.015.

Towards Deterministic Creation of Single Photon Sources in Diamond using In-Situ Ion Counting

Scalable creation of silicon-vacancy color centers in diamond by ion implantation through a 1-$μ$m pinhole

Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures

High-Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium

Cavity-enhanced single photon source based on the silicon vacancy center in diamond

Large-scale Fabrication of High-Density Silicon-vacancy Centers via Helium-ion Implantation of Diamond Nucleation Surface

Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Chromium single photon emitters in diamond fabricated by ion implantation

Single ion implantation for single donor devices using Geiger mode detectors

Single-photon emission from silicon-vacancy color centers in polycrystalline diamond membranes

Two-Photon Interference from Silicon-Vacancy Centers in Remote Nanodiamonds

Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams

Graphene-Enhanced Single Ion Detectors for Deterministic Near-Surface Dopant Implantation in Diamond

Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si$_3$N$_4$ quantum photonic circuits

Shallow Silicon Vacancy Centers with lifetime-limited optical linewidths in Diamond Nanostructures

Closed-Loop Electron-Beam-Induced Spectroscopy and Nanofabrication Around Individual Quantum Emitters

Single Ion Implantation for Solid State Quantum Computer Development

Silicon-vacancy color centers in phosphorus-doped diamond