Abstract:Hybrid systems have recently attracted increasing attention, which combine the special attributes of each constitute and create interesting functionalities through multiple heterointerface interactions. Here, we design a two-dimensional (2D) hybrid phototransistor utilizing Janus-interface engineering, in which the WSe2 channel combines light-sensitive perovskite and spontaneously polarized ferroelectrics, achieving collective ultrasensitive detection performance. The top perovskite (BA2(MA)3Pb4I13) layer can absorb the light efficiently and provide generous photoexcited holes to WSe2. WSe2 exhibit p-type semiconducting states of different degrees due to the selective light-operated doping effect, which also enables the ultrahigh photocurrent of the device. The bottom ferroelectric (Hf0.5Zr0.5O2) layer dramatically decreases the dark current, which should be attributed to the ferroelectric polarization assisted charge trapping effect and improved gate control. As a whole, our phototransistors show excellent photoelectric performances across the ultraviolet to near-infrared range (360-1050 nm), including an ultrahigh ON/OFF current ratio > 109 and low noise-equivalent power of 1.3 fW/Hz1/2, all of which are highly competitive in 2D semiconductor-based optoelectronic devices. In particular, the devices show excellent weak light detection ability, where the distinguishable photoswitching signal is obtained even under a record-low light intensity down to 1.6 nW/cm2, while showing a high responsivity of 2.3 × 105 A/W and a specific detectivity of 4.1 × 1014 Jones. Our work demonstrates that Janus-interface design makes the upper and lower interfaces complement each other for the joint advancement into high-performance optoelectronic applications, providing a picture to realize the integrated engineering on carrier dynamics by light irradiation, electric field, interfacial trapping, and band alignment.

In Situ Defect Engineering of Controllable Carrier Types in WSe 2 for Homomaterial Inverters and Self-Powered Photodetectors

Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation

Optoelectronic Performance of Multilayer WSe2 Transistors Enhanced by Defect Engineering

Defects As a Factor Limiting Carrier Mobility in WSe 2 : A Spectroscopic Investigation

Charge Transfer at the Hetero‐Interface of WSe2/InSe Induces Efficient Doping to Achieve Multi‐Functional Lateral Homo‐Junctions

Charge Transfer at the Hetero‐Interface of WSe 2 /InSe Induces Efficient Doping to Achieve Multi‐Functional Lateral Homo‐Junctions

High performance photodetector based on WSe2 p-n homojunction induced by the electron doping from Bi2O2Se

Lateral 2D WSe2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics

Se-Vacancy Healing with Substitutional Oxygen in WSe2 for High-Mobility p-Type Field-Effect Transistors

Defects controlled hole doping and multivalley transport in SnSe single crystals

Controllable Doping in 2D Layered Materials

Self-powered Waveguide-Integrated Photodetector Based on a Defect-Engineered WSe2/graphene Heterojunction

Defect Engineering of Out-of-Plane Charge Transport in Van Der Waals Heterostructures for Bi-Direction Photoresponse

Interface-Induced WSe 2 In-plane Homojunction for High-Performance Photodetection

Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection

Unidirectional charge transport originated from defect boundary on two-dimensional heterostructure

Tunable Electron Transport in Defect-Engineered PdSe$_\mathrm{2}$

Boosting the Sensitivity of WSe2 Phototransistor Via Janus Interfaces with 2D Perovskite and Ferroelectric Layers.

Controllable Polarization and Doping in Ferroelectric In2Se3 Monolayers and Heterobilayers Via Intrinsic Defect Engineering

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Controlling phase transition in WSe2 towards ideal n-type transistor