Abstract:A perpetual quest in the field of topological quantum matter is to search for electronic phases with unprecedented band topology and transport phenomena. The most prominent example is the discovery of topological insulators, in which band inversion leads to topologically nontrivial bulk electronic structure and metallic boundary states. In two-dimensional topological insulators with time-reversal symmetry, a pair of helical edge states gives rise to the quantum spin Hall effect. When the time-reversal symmetry is broken by magnetic order, only one chiral edge mode remains and the quantum anomalous Hall effect emerges in zero magnetic field. This quantum Hall phase without Landau levels, first observed in magnetically doped topological insulators, is now called the Chern insulator. The recently discovered MnBi2Te4 combines intrinsic magnetism and nontrivial topology in one material, providing an ideal platform for exploring novel topological phases. Here, we investigate the transport properties of exfoliated MnBi2Te4 in exceedingly high magnetic fields up to 60 T. By varying the gate voltage, we observe systematic and yet uniquely complex evolution of quantized Hall plateaus with Chern numbers from C = -3 to +2. More surprisingly, a novel phase characterized by an extremely broad zero Hall plateau emerges as the most robust ground state in the high field limit. Theoretical calculations reveal that this C = 0 phase arises from the coexistence of a connate Chern band with C = -1 and a Zeeman-effect-induced Chern band with C = +1, as corroborated by nonlocal transport measurements. This helical Chern insulator phase with broken time-reversal symmetry represents an unexpected new member of the quantum Hall family, and manifests a new route to change the band topology by using magnetic field.

Exchange-Driven Chern States in High-Mobility Intrinsic Magnetic Topological Insulators

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi 2 Te 4

Magnetic-field-induced robust zero Hall plateau state in MnBi2Te4 Chern insulator

Large Itinerant Electron Exchange Coupling in the Magnetic Topological Insulator MnBi2Te4

Large Exchange Coupling Between Localized Spins and Topological Bands in MnBi2 Te4.

Large Exchange Coupling Between Localized Spins and Topological Bands in Magnetic Topological Insulator MnBi2Te4

Helical Chern insulator phase with broken time-reversal symmetry in MnBi$_2$Te$_4$

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Scaling and Nonlocal Behavior of the Chern Insulator State in Magnetic Topological Insulator MnBi2Te4 Device

Dirac fermion approach and its application to design high Chern numbers in magnetic topological insulator multilayers

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

Symmetry-driven anisotropic coupling effect in antiferromagnetic topological insulator: Mechanism for high-Chern-number quantum anomalous Hall state

Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

Ferromagnetic-antiferromagnetic coexisting ground state and exchange bias effects in MnBi4Te7 and MnBi6Te10

Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4

Symmetry-driven Anisotropic Coupling Effect in Antiferromagnetic Topological Insulator: Mechanism for a Quantum Anomalous Hall State with a High Chern Number

Layer-Dependent Magnetic Structure and Anomalous Hall Effect in the Magnetic Topological Insulator MnBi4Te7.

Hybridization-induced gapped and gapless states on the surface of magnetic topological insulators

Chern Number Tunable Quantum Anomalous Hall Effect in Compensated Antiferromagnets

Engineering Quantum Anomalous Hall Effect in Monolayer Janus MnBi2SexTe4-x