Abstract:Layered transition metal dichalcogenides (TMDs) are being considered as a promising alternative channel material in ultra-thin and low power nanoelectronics, due to the significant tunability of their electronic properties via mechanisms such as mechanical strain, control of the material thickness, application of an external field, impurities, doping, alloying, or altering the substrate nature. Initially, monolayer TMDs as counterparts to graphene captured the attention of the scientific community owing to their semiconductor nature with sizable band gaps. However, certain physical and chemical properties of TMDs, such as their oxygen reactivity and stability in air need to be more completely understood in order to crystallize the promising superior performance of TMD-based electronic devices. Here, a comparative analysis of the stability of various TMDs (MX2: , W; , Se) in air is performed using density-functional theory (DFT) as well as x-ray photoelectron spectroscopy (XPS). We find that the surface chemistry of the basal plane of sulfides and selenides is relatively stable in air although for completely different reasons, which can be explained by investigating oxygen dissociative adsorption kinetics and thermodynamics. On the contrary, the edge of MX2 nanoribbons shows strong driving forces towards O2 dissociation and chemisorption. Our combined theoretical and experimental investigation reveals that the air stability of TMDs should not be placed in the same footing that other 2D materials, like graphene. Thus, this work highlights the importance of having controlled oxygen environment during crystal exfoliation/growth and defect passivation in order to provide high quality uniform materials for TMD-based device fabrication.

Photo-oxidative Crack Propagation in Transition Metal Dichalcogenides

Visualizing Point Defects in Transition Metal Dichalcogenides Using Optical Microscopy.

Unveiling chemical reactivity and oxidation of 1T-phased group VI disulfides.

Oxidation-induced modulation of photoresponsivity in monolayer MoS2 with sulfur vacancies

Chemical treatments of Monolayer Transition Metal Dichalcogenides and Their Prospect in Optoelectronic Applications

Chemical Passivation of 2D Transition Metal Dichalcogenides: Strategies, Mechanisms, and Prospects for Optoelectronic Applications

Observing Grain Boundaries in CVD-grown Monolayer Transition Metal Dichalcogenides.

Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: basal versus edge oxidation

Advances and Applications of Oxidized van der Waals Transition Metal Dichalcogenides

Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

Defect Tolerant Monolayer Transition Metal Dichalcogenides

The Defects Genome of 2D Janus Transition Metal Dichalcogenides

Optical Grade Transformation of Monolayer Transition Metal Dichalcogenides via Encapsulation Annealing

Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping

Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment

Unraveling High-Yield Phase-Transition Dynamics in Transition Metal Dichalcogenides on Metallic Substrates.

Macroscopic transition metal dichalcogenides monolayers with uniformly high optical quality

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory

Understanding the Synergistic Oxidation in Dichalcogenides through Electrochemiluminescence Blinking at Millisecond Resolution

Spontaneous exciton dissociation in transition metal dichalcogenide monolayers