Chemical Vapor Deposition Growth of 2D Ferroelectric Materials for Device Applications

Liyao Wang,Guodong Sun,Shuoguo Yuan

DOI: https://doi.org/10.1002/admt.202301973

IF: 6.8

2024-03-12

Advanced Materials Technologies

Abstract:Recent studies have shown that chemical vapor deposition (CVD) can provide a powerful approach to synthesis of large‐area 2D ferroelectric materials, which enables the ferroelectrics to be most promising in integrating 2D materials for next‐generation electronic devices. This review provide a comprehensive understanding of CVD‐grown 2D ferroelectric materials and discuss the current challenges of applying them to device applications. 2D ferroelectric materials have garnered extensive attention for promising applications in next‐generation electronic devices, which provides a platform to explore ferroelectricity without the critical thickness constraint of traditional perovskite oxide‐based ferroelectric materials. Recent studies have shown that chemical vapor deposition (CVD) can synthesis the large‐area 2D ferroelectric materials, making the 2D ferroelectric materials to be compatible with scalable semiconductor devices. In this Review, the CVD‐grown 2D ferroelectric materials are summarized in terms of materials, properties to devices application view. First, the synthesis strategy and recent advances of the CVD growth of 2D ferroelectric materials are highlighted in the aspects of diverse groups of 2D materials. Second, the recent experimental progress of 2D ferroelectric devices is introduced, and the potential applications of 2D ferroelectric devices are discussed. The availability of the CVD‐grown 2D ferroelectrics provides an abundant playground for not only deep studying the ferroelectric properties, but also conceiving various device applications. Lastly, the perspectives are provided to address the current challenges in terms of materials design, physics mechanism, device, and multifunctional application.

materials science, multidisciplinary