Physically‐Deposited Hole Transporters in Perovskite PV: NiOx Improved with Li/Mg Doping (Adv. Mater. Technol. 7/2024)

Salih Alper Akalin,Mustafa Erol,Begum Uzunbayir,Sibel Oguzlar,Serdar Yildirim,Fatma Pinar Gokdemir Choi,Serap Gunes,Ugur Deneb Yilmazer Menda,Manuel J. Mendes
DOI: https://doi.org/10.1002/admt.202470030
IF: 6.8
2024-04-05
Advanced Materials Technologies
Abstract:Hole Transport Material In article number 2301760, Salih Alper Akalin and co‐workers explore Li and Mg co‐doped NiOx thin films physically deposited from developed sputtering targets obtained through cold isostatic pressing and sintering. Improvements in mobility and conductivity values are observed with Li and Mg doping, which contribute to enhanced PSC performance when used as an HTM layer in the glass‐indium tin oxide/NiOx‐based HTM/MAPbI3/phenyl butryic acid methyl ester bathocuproine/Ag architecture.
materials science, multidisciplinary
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