TaF4: A Novel Two-Dimensional Antiferromagnetic Material with a High Néel Temperature Investigated Using First-Principles Calculations

Jia Luo,Qingkai Zhang,Jindong Lin,Yuxiang Ni,Hongyan Wang,Yongliang Tang,Mu Lan
DOI: https://doi.org/10.3390/ma17112780
IF: 3.4
2024-06-07
Materials
Abstract:The structural, electronic, and magnetic properties of a novel two-dimensional monolayer material, TaF4, are investigated using first-principles calculations. The dynamical and thermal stabilities of two-dimensional monolayer TaF4 were confirmed using its phonon dispersion spectrum and molecular dynamics calculations. The band structure obtained via the high-accuracy HSE06 (Heyd–Scuseria–Ernzerhof 2006) functional theory revealed that monolayer two-dimensional TaF4 is an indirect bandgap semiconductor with a bandgap width of 2.58 eV. By extracting the exchange interaction intensities and magnetocrystalline anisotropy energy in a J1-J2-J3-K Heisenberg model, it was found that two-dimensional monolayer TaF4 possesses a Néel-type antiferromagnetic ground state and has a relatively high Néel temperature (208 K) and strong magnetocrystalline anisotropy energy (2.06 meV). These results are verified via the magnon spectrum.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
What problem does this paper attempt to address?
The paper attempts to address the problem of exploring the structure, electronic, and magnetic properties of a novel 2D monolayer material TaF₄, and to verify its potential as a 2D antiferromagnetic material with a high Néel temperature. Specifically, the researchers aim to confirm the dynamical and thermodynamic stability of TaF₄ through first-principles calculations and to explore its potential applications in spintronics. ### Main Research Questions: 1. **Structural Stability**: Verify the dynamical and thermodynamic stability of the 2D monolayer TaF₄ through phonon dispersion spectra and molecular dynamics simulations. 2. **Electronic Properties**: Determine the band structure of the 2D monolayer TaF₄, particularly its band gap width, using the high-precision HSE06 functional theory. 3. **Magnetic Properties**: Confirm the antiferromagnetic ground state and Néel temperature of the 2D monolayer TaF₄ by extracting the exchange interaction strength and magnetocrystalline anisotropy energy. 4. **Experimental Feasibility**: Evaluate the possibility of experimental synthesis by calculating the formation energy and interlayer binding energy of the 2D monolayer TaF₄. ### Research Background: In recent years, 2D antiferromagnetic materials have garnered widespread attention in the field of spintronics due to their unique physical properties and potential applications. However, precise control over growth conditions and parameters to prepare high-quality, large-area 2D antiferromagnetic materials, as well as further improving their stability and tuning their magnetic properties, remain pressing issues. This paper predicts a novel 2D monolayer material TaF₄ through theoretical calculations, aiming to provide theoretical support for its application in spintronics. ### Research Methods: - **First-Principles Calculations**: Perform spin-polarized calculations using the Vienna Ab-initio Simulation Package (VASP) within the framework of density functional theory (DFT). - **Phonon Dispersion Spectra**: Calculate phonon dispersion spectra using density functional perturbation theory (DFPT) to verify the dynamical stability of the material. - **Molecular Dynamics Simulations**: Conduct ab initio molecular dynamics simulations to verify the thermodynamic stability of the material. - **Exchange Interaction and Magnetocrystalline Anisotropy**: Extract the exchange interaction strength and magnetocrystalline anisotropy energy using the Heisenberg model to confirm the magnetic properties of the material. - **Monte Carlo Simulations**: Perform Monte Carlo simulations to calculate the Néel temperature. ### Main Findings: - **Structural Stability**: The 2D monolayer TaF₄ exhibits good dynamical and thermodynamic stability. - **Electronic Properties**: The 2D monolayer TaF₄ is an indirect bandgap semiconductor with a bandgap width of approximately 2.58 eV. - **Magnetic Properties**: The 2D monolayer TaF₄ has a Néel-type antiferromagnetic ground state with a Néel temperature of approximately 208 K and a strong magnetocrystalline anisotropy energy (2.06 meV). - **Experimental Feasibility**: The formation energy and interlayer binding energy of the 2D monolayer TaF₄ suggest that it can potentially be obtained through mechanical exfoliation. ### Conclusion: This study successfully predicts the potential of the 2D monolayer TaF₄ as a novel 2D antiferromagnetic material through first-principles calculations. Its relatively high Néel temperature and strong magnetocrystalline anisotropy energy make it promising for applications in spintronics. Additionally, the calculation results indicate the possibility of experimental synthesis of the 2D monolayer TaF₄, providing a theoretical foundation for further experimental research.