Computational analysis of device-to-device variability in resistive switching through single-layer hexagonal boron nitride and graphene vertical heterostructure model

Aykut Turfanda,Hilmi Ünlü
DOI: https://doi.org/10.1088/1361-6463/ad40b9
2024-04-20
Journal of Physics D Applied Physics
Abstract:We quantify the device-to-device variations in resistive switching devices by considering a single-layer hexagonal boron nitride and graphene junction as a model. We mimic the variation in two-dimensional material's surface in terms of defects and interface states by changing the distance between the single-layer hexagonal boron nitride and graphene. We use the density functional theory as methodology to carry out simulations at atomic scale. We found that the distance is affecting the current-voltage characterization results and creating ultra uniform structures are important to reduce the device-to-device variability. These results are important to understand the reliability and accuracy of device-to-device variations in memory devices and to mimic the neural dynamics beyond the synaptic cleft.
physics, applied
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