Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks

Javad Shabani, Morten Kjærgaard, Henri J Suominen, Younghyun Kim, Fabrizio Nichele, Kiryl Pakrouski, T Stankevic, Roman M Lutchyn, Peter Krogstrup, Robert Feidenhans'l, S Kraemer, Chetan Nayak, Matthias Troyer, Charles M Marcus, Christopher J Palmström
2016-04-15
Abstract:A key challenge in fabrication of superconductor (S)-semiconductor (Sm) hybrid devices is forming highly transparent contacts between the active electrons in the semiconductor and the superconducting metal. In this work, we show that a near perfect interface and a highly transparent contact can be achieved using epitaxial growth of aluminum on an InAs two-dimensional electron system. We demonstrate that this material system, Al-InAs, satisfies all the requirements necessary to reach into the topological superconducting regime by individual characterization of the semiconductor two-dimensional electron system, superconductivity of Al, and performance of S-Sm-S junctions. This exciting development might lead to a number of useful applications ranging from spintronics to quantum computing.
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