Abstract:The single-layer MoS2 is a highly sought-after semiconductor material in the field of photoelectric performance due to its exceptional electron mobility and narrow bandgap. However, its photocatalytic efficiency is hindered by the rapid recombination rate of internal photogenerated electron–hole pairs. Currently, the construction of heterojunctions has been demonstrated to effectively mitigate the recombination rate of photogenerated electron–hole pairs. Therefore, this paper employs the first principles method to calculate and analyze the four heterojunctions formed by MoS2/WSe2, MoS2/MoSe2, MoS2/AlN, and MoS2/ZnO. The study demonstrates that the four heterojunctions exhibit structural stability. The construction of heterojunctions, as compared to a monolayer MoS2, leads to a reduction in the band gap, thereby lowering the electron transition barrier and enhancing the light absorption capacity of the materials. The four systems exhibit II-type heterojunction. Therefore, the construction of heterojunctions can effectively enhance the optical properties of these systems. By forming heterojunctions MoS2/WSe2 and MoS2/MoSe2, the absorption coefficient in the visible light region is significantly increased, resulting in a greater ability to respond to light compared to that of MoS2/ZnO and MoS2/AlN. Consequently, MoS2-based heterojunctions incorporating chalcogenide components WSe2 and MoSe2, respectively, exhibit superior catalytic activity compared to MoS2 heterojunctions incorporating non-chalcogenide components ZnO and AlN, respectively. The absorption spectrum analysis reveals that MoS2/MoSe2 exhibits the highest light responsivity among all investigated systems, indicating its superior photoelectric performance.

First-principles investigations of the geometric structures and electronic properties of pristine and Ag/Au-doped Janus MoSSe/C60 and WSSe/C60 heterostructures

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of Mos2/Graphene Heterostructures

Electronic and Optical Properties of Pristine and Vertical and Lateral Heterostructures of Janus MoSSe and WSSe

Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

Electronic Properties of Germanene on Pristine and Defective MoS2 : A First-Principles Study

Unraveling the influence of defects in Janus MoSSe and Janus alloys MoS 2(1− x ) Se 2 x

Spectroscopic Signatures of Interlayer Coupling in Janus MoSSe/MoS2 Heterostructures

High energy region formation with increased electron density located on the MoS2 layer within MoS2/Gr heterostructure induced by C60 decoration

First-principles investigation of potential water-splitting photocatalysts and photovoltaic materials based on Janus transition-metal dichalcogenide/WSe2 heterostructures

Electronic and Structural Properties of Janus SMoSe/MoX$_2$ (X=S,Se) In-plane Heterojunctions: A DFT Study

Electric fields and strains effect on the electronic and optical properties of Zr2CO2/MoSSe van der Waals heterostructure

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.

Electronic structure and photocatalytic mechanism of g-SiC/MoSSe van der waals heterostructures: A first principles study

Studies on Electronic Structure and Optical Properties of MoS2/X (X = WSe2, MoSe2, AlN, and ZnO) Heterojunction by First Principles

Mechanical Behaviors in Janus Transition-Metal Dichalcogenides: A Molecular Dynamics Simulation

Exploring the versatility in the MoSe2/WS2 heterostructures

The role of intrinsic atomic defects in a Janus MoSSe/XN (X = Al, Ga) heterostructure: a first principles study

Investigating the high field transport properties of Janus WSSe and MoSSe by DFT analysis and Monte Carlo simulations

First-Principles Studies of Strain-Adjustable Janus WSSe Monolayer/g-GeC Monolayer Heterojunctions: Implications for Photoelectric and Switching Devices