Development of Pyr‐TPA as Interfacial Passivation Layer Enables Efficient and Stable n‐i‐p Perovskite Solar Cells

Lusheng Liang,Zilong Zhang,Yuheng Li,Xuteng Yu,Fulin Lin,Yuan Xu,Zhang Lan,Marco Cavazzini,Gianluca Pozzi,Simonetta Orlandi,Peng Gao
DOI: https://doi.org/10.1002/solr.202300415
IF: 9.1726
2023-07-11
Solar RRL
Abstract:Interfacial passivation is a crucial technique for improving the performance of perovskite solar cells (PSCs) by suppressing non‐radiative recombination. Incorporating electron‐rich functional groups into organic semiconductors can combine the advantages of Lewis bases and organic semiconductors to achieve defect passivation of perovskite films and interfacial charge transport improvement simultaneously. However, interlayers generated by organic semiconductors are often destroyed during the deposition of the hole transport layer (HTL) in n‐i‐p PSCs. This prevents the accurate evaluation of interfacial passivation effects. In this study, we introduce a pyromellitic derivative, 2,6‐bis(4‐(bis(4‐methoxyphenyl)amino)phenyl)pyrrolo[3,4‐f]isoindole‐1,3,5,7(2H,6H)‐tetraone (Pyr‐TPA), containing four carbonyl groups that can passivate defects and enhance hole transport while simultaneously acting as a stable interlayer at the perovskite/HTL interface due to its ideal solubility profile. As a result, Pyr‐TPA as an interlayer can minimize non‐radiative recombination loss, resulting in PCEs of up to 24.16%. Additionally, the interfacial Pyr‐TPA passivation layer also exhibits strong resistance to moisture and ion migration, leading to enhanced long‐term ambient stability of PSCs based on this material. Our findings provide valuable insights into developing efficient and stable PSCs with simple and effective organic semiconductor interfacial passivation materials. This article is protected by copyright. All rights reserved.
energy & fuels,materials science, multidisciplinary
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