Abstract:The low Seebeck coefficient and the high thermal conductivity deteriorate the thermoelectric properties of GeTe. Herein, the Seebeck coefficient is enhanced by promoting band convergency induced by the strongly correlated d, f electrons of rare earth elements. The doping of Pb and Bi causes avoided crossing and hierarchical structure, strengthening the full‐spectrum scattering of phonons and decelerating the sound velocity. As a highly promising thermoelectric material in the mid‐temperature region, pristine GeTe shows deteriorated thermoelectric properties due to the low Seebeck coefficient and the intrinsic high thermal conductivity. Herein, it is discovered that the introduction of strongly correlated d, f electrons by alloying rare‐earth atoms at Ge sites will increase the band effective mass and promote band convergency, which can largely improve the electric transport property. Moreover, the heavy atoms (Pb, Bi) doping induces optical phonon softening and the avoided crossing between acoustic and optical phonon branches, decelerating both optical and acoustic phonon velocities. The modulated composition wave from the fluctuated multi‐component distribution introduces a complicated hierarchical structure including point defects and nanoprecipitates, which provides all‐scale scattering sources for heat‐carrying phonons and results in low lattice thermal conductivity. Consequently, a high zT of 2.4 at 800 K can be obtained in the Ge0.86Pb0.09Bi0.03Ce0.005Te sample due to the combination of strong correlation for d, f electrons and the full‐spectrum scattering for phonons. This work provides an effective strategy to increase the thermoelectric performance of IV–VI compounds by combining the modulated band structure and the softening phonon dispersion.

Simultaneously achieving high ZT and mechanical hardness in highly alloyed GeTe with symmetric nanodomains

Simultaneously achieving high <i>ZT</i> and mechanical hardness in highly alloyed GeTe with symmetric nanodomains

Valence Band Modification and Enhanced Phonon‐Phonon Interactions for High Thermoelectric Performance in GeTe

Enhanced thermoelectric performance in GeTe-Sb2Te3 pseudo-binary via lattice symmetry regulation and microstructure stabilization

Achieving Superior Thermoelectric Performance in Ge4Se3Te Via Symmetry Manipulation with I–V–VI2 Alloying

Evolution of defect structures leading to high ZT in GeTe-based thermoelectric materials

Band Modulation and Strain Fluctuation for Realizing High Average zT in GeTe

Anomalous Enhancement of Thermoelectric Performance in GeTe with Specific Interaxial Angle and Atomic Displacement Synergy

Enhanced near-room-temperature thermoelectric performance in GeTe

Achieving High‐Performance Ge 0.92 Bi 0.08 Te Thermoelectrics via LaB 6 ‐Alloying‐Induced Band Engineering and Multi‐Scale Structure Manipulation

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Enhanced Thermoelectric Performance in GeTe by Synergy of Midgap state and Band Convergence

Rhombohedral to Cubic Conversion of GeTe via MnTe Alloying Leads to Ultralow Thermal Conductivity, Electronic Band Convergence, and High Thermoelectric Performance

Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Simultaneous Suppression of Phonon Transport and Carrier Concentration for Efficient Rhombohedral GeTe Thermoelectric

Strong Phonon-Phonon Interactions Securing Extraordinary Thermoelectric Ge 1- x Sb x Te with Zn-Alloying-Induced Band Alignment.

Achieving high thermoelectric quality factor toward high figure of merit in GeTe

Crystal Symmetry Induced Structure and Bonding Manipulation Boosting Thermoelectric Performance of GeTe

High thermoelectric performance in GeTe with compositional insensitivity

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys Via Introducing Cu2Te Nanocrystals and Resonant Level Doping.

Achieving High-Performance Ge<sub>0.92</sub>Bi<sub>0.08</sub>Te Thermoelectrics via LaB<sub>6</sub>-Alloying-Induced Band Engineering and Multi-Scale Structure Manipulation