Abstract:Semiconductor nanowires have demonstrated fascinating properties with applications in a wide range of fields, including energy and information technologies. Particularly, increasing attention has focused on SiGe nanowires for applications in a thermoelectric generation. In this work, a bottom-up vapour-liquid-solid chemical vapour Deposition methodology is employed to integrate heavily boron-doped SiGe nanowires on thermoelectric generators. Thermoelectrical properties -, i.e., electrical and thermal conductivities and Seebeck coefficient - of grown nanowires are fully characterized at temperatures ranging from 300 to 600 K, allowing the complete determination of the Figure-of-merit, zT, with obtained values of 0.4 at 600 K for optimally doped nanowires. A correlation between doping level, thermoelectric performance, and elemental distribution is established employing advanced elemental mapping (synchrotron-based nano-X-ray fluorescence). Moreover, the operation of p-doped SiGe NWs integrated into silicon micromachined thermoelectrical generators is shown over standalone and series- and parallel-connected arrays. Maximum open circuit voltage of 13.8 mV and power output as high as 15.6 µW cm-2 are reached in series and parallel configurations, respectively, operating upon thermal gradients generated with hot sources at 200 °C and air flows of 1.5 m s-1 . These results pave the way for direct application of SiGe nanowire-based micro-thermoelectric generators in the field of the Internet of Things.

A study of iron-doped SiGe growth for thermoelectric applications

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Phonon relaxation effect by regeneration of nano-inclusions in SiGe for ultralow thermal conductivity and enhanced thermoelectric performance

Enhancement of thermoelectric performance in n-type Si90Ge10-based alloy by metallic Zn doping

Enhanced thermoelectric performance in a metal/semiconductor nanocomposite of iron silicide/silicon germanium

High thermoelectric properties of P-SiGe/Sr0.9La0.1Ti0.9-xZrxNb0.1O3 composite

Al-Si Alloy as a Diffusion Barrier for GeTe-Based Thermoelectric Legs with High Interfacial Reliability and Mechanical Strength

Thermoelectric enhancement of p-type Si <sub>80</sub>Ge <sub>20</sub> alloy via co-compositing of dual oxides: Respective regulation for power factor and thermal conductivity by β-Ga <sub>2</sub>O <sub>3</sub> and SiO <sub>2</sub> aerogel powders

Enhanced thermoelectric performance enabled by compositing ZrO2 in n-type SiGe alloy with low thermal conductivity

Thermoelectric enhancement of p-type Si<sub>80</sub>Ge<sub>20</sub> alloy via co-compositing of dual oxides: Respective regulation for power factor and thermal conductivity by ?-Ga<sub>2</sub>O<sub>3</sub> and SiO<sub>2</sub> aerogel powders

Thermoelectric performance enhancement in p-type Si via dilute Ge alloying and B doping

Realizing high thermoelectric performance for p-type SiGe in medium temperature region via TaC compositing

Silicon-based thermoelectrics made from a boron-doped silicon dioxide nanocomposite

Thermoelectric properties of silicon germanium alloy nanocomposite fabricated by mechanical alloying and spark plasma sintering

Si-Based Materials for Thermoelectric Applications

Enhancing thermoelectric performance in GeTe through Ge enrichment regulation and AgCuTe alloying

Superior Thermoelectric Performance of SiGe Nanowires Epitaxially Integrated into Thermal Micro-Harvesters

Thermoelectric Properties P-Type Si-20 at % Ge by Addition of Tin Nanoparticles

Thermoelectric properties of n-type SiGe alloys with Sn incorporation

Elevated Thermoelectric Figure of Merit of N-Type Amorphous Silicon by Efficient Electrical Doping Process

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys Via Introducing Cu2Te Nanocrystals and Resonant Level Doping.