Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
Qingkai Yu,Luis A. Jauregui,Wei Wu,Robert Colby,Jifa Tian,Zhihua Su,Helin Cao,Zhihong Liu,Deepak Pandey,Dongguang Wei,Ting Fung Chung,Peng Peng,Nathan Guisinger,Eric A. Stach,Jiming Bao,Shin-shem Pei,Yong P. Chen
DOI: https://doi.org/10.1038/nmat3010
2011-03-22
Abstract:The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene's electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman "D" peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.
Mesoscale and Nanoscale Physics,Materials Science