Abstract:So far, layered PdSe2 has attracted much attention due to its completely tunable band-gap with varying layer numbers, yet the thickness-dependent transporting properties have been rarely studied. We have systematically studied the electronic structures, phonon and charge transport properties, and thermoelectric properties of few-layered (from 1L to 4L) and bulk PdSe2 by first-principles calculations and Boltzmann transport theory. As the thickness increases, the energy levels of band edges relative to 4s of selenium move oppositely due to their different bonding states, leading to the power-law decrease of the band-gap. Meanwhile, the electron effective mass decreases rapidly while the hole effective mass increases significantly compared with those unperturbed. Calculations on elastic constants reveal that both bulk and few-layered PdSe2 are mechanically stable, and the bulk is ductile with a Poisson's ratio of 0.27. The shifts of Raman active modes with respect to the thickness as well as their Gruneisen parameters are analyzed and the underlying physics is discussed. At room temperature, the thermal conductivities of the bulk are 7.7, 10.1 and 0.9 W m-1 K-1 along the a, b and c axes, respectively. It is found that the low-frequency modes (<2.0 THz) contribute about 80% of in-plane thermal conductivities. Due to the enhanced contribution from the ZA mode, the thermal conductivity of few-layered PdSe2 is much larger than that of the bulk. The ZA mode is mainly scattered by itself and the Umklapp scattering dominates in the process as the thickness increases. Calculations on charge transport reveal that the electron mobility increases from 2.5-13.2 (1L) to 121.9-167.8 (4L) cm2 V-1 s-1 with the decreasing anisotropy μb/μa, while the hole mobility remains to be ∼20 cm2 V-1 s-1, which is in good agreement with the experimental results. Calculations on the thermoelectric properties reveal that the ZT value as well as the power factor increases largely as the thickness increases and it gets to be optimum for the triple layer. Interestingly, the transport of electrons and phonons is decoupled along the out-of-plane direction, which makes bulk PdSe2 exhibit good thermoelectric performance along the c axis.

Layer-dependent electronic structure and optical properties of two-dimensional PdSSe

Layer-dependent Optical and Dielectric Properties of Large-size PdSe_2 Films Grown by Chemical Vapor Deposition

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Physical Properties and Photovoltaic Application of Semiconducting Pd2Se3 Monolayer

Layer-dependent optical and dielectric properties of centimeter-scale PdSe2 films grown by chemical vapor deposition

Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics

Enhanced Photoresponse of Highly Air-Stable Palladium Diselenide by Thickness Engineering

Few-Layer PdSe2 Sheets: Promising Thermoelectric Materials Driven by High Valley Convergence

Pentagonal two-dimensional noble-metal dichalcogenide PdSSe for photocatalytic water splitting with pronounced optical absorption and ultrahigh anisotropic carrier mobility

Giant Thickness-Tunable Bandgap and Robust Air Stability of 2D Palladium Diselenide.

Low-lying Electronic States with Giant Linear Dichroic Ratio Observed in PdSe2

Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition

Electronic Structure and Optical Characteristic for Pd3P2S8 Layers

Two-dimensional pentagonal material Penta-PdPSe: A first-principle study

Anisotropic Growth and Scanning Tunneling Microscopy Identification of Ultrathin Even-Layered PdSe2 Ribbons.

Thickness-dependent Anisotropic Transport of Phonons and Charges in Few-Layered PdSe2

Formation Of Hexagonal Pdse2 For Electronics And Catalysis

The mechanical, electronic and optical properties of two-dimensional transition metal chalcogenides MX2 and M2X3 (M = Ni, Pd; X = S, Se, Te) with hexagonal and orthorhombic structures

Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystals.

Large bulk photovoltaic effect and second-harmonic generation in few-layer pentagonal semiconductors PdS$_2$ and PdSe$_2$