Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi 2 Te 4

Fuchen Hou,Qiushi Yao,Chun-Sheng Zhou,Xiao-Ming Ma,Mengjiao Han,Yu-Jie Hao,Xuefeng Wu,Yu Zhang,Hongyi Sun,Chang Liu,Yue Zhao,Qihang Liu,Junhao Lin

DOI: https://doi.org/10.1021/acsnano.0c03149

IF: 17.1

2020-08-19

ACS Nano

Abstract:MnBi₂Te₄ is an antiferromagnetic topological insulator that has stimulated intense interest due to its exotic quantum phenomena and promising device applications. The surface structure is a determinant factor to understand the magnetic and topological behavior of MnBi₂Te₄, yet its precise atomic structure remains elusive. Here we discovered a surface collapse and reconstruction of few-layer MnBi₂Te₄ exfoliated under delicate protection. Instead of the ideal septuple-layer structure in the bulk, the collapsed surface is shown to reconstruct as a Mn-doped Bi₂Te₃ quintuple layer and a Mn_<i>x</i>Bi_<i>y</i>Te double layer with a clear van der Waals gap in between. Combined with first-principles calculations, such surface collapse is attributed to the abundant intrinsic Mn–Bi antisite defects and the tellurium vacancy in the exfoliated surface, which is further supported by <i>in situ</i> annealing and electron irradiation experiments. Our results shed light on the understanding of the intricate surface-bulk correspondence of MnBi₂Te₄ and provide an insightful perspective on the surface-related quantum measurements in MnBi₂Te₄ few-layer devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c03149?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c03149</a>.Further experimental and theoretical details, including XPS chemical analysis and AFM characterizations of the MnBi₂Te₄ single crystal at the cleaved surface, more cross-sectional STEM images of the MnBi₂Te₄ surface and the corresponding EDS and EELS mapping, the statistical intensity variation in STEM images with different concentrations of exchange Mn–Bi defects, phonon dispersion of the MnTe DL structure, the formation energies of various defects in MnBi₂Te₄ under different chemical environments, relative surface energy with different defect concentrations, and DFT-calculated surface band structures of MnBi₂Te₄ SL and Bi₂Te₃ QL terminations (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c03149/suppl_file/nn0c03149_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology