Abstract:Highlights • Novel technique is used in stability heating effects induced by thermal influence of photothermal theory. • Analysis is established stability processes at the boundaries of the semiconductor medium. • Applying one-dimensional elastic-optoelectronic deformation, governing equations are established. • Laplace transforms with short-time approximations are utilized to transform physical fields to frequency domain. • Main physical quantities with various values of eigenvalues approaches are obtained by HPM. This work employs a new approach to study the stability heating effects caused by the thermal influence of photothermal theory. In addition, our investigation identified stability mechanisms occurring at the limits of the semiconductor (SC) medium. We have examined the interactions of photosensitive, thermic, and mechanical waves inside a medium's half-space using the theory of photo-thermoelectricity. The establishment of governing equations is achieved by utilizing one-dimensional elastic-optoelectronic deformation. Utilizing advanced mathematical techniques, such as Laplace transform with short-time approximations, we transform the foremost physical domains to the frequency domain, imposing conditions on the free surface of the elastic medium to enhance stability. Employing the homotopy perturbation method, the stability of the main physical quantities is obtained, with silicon as the chosen material. Graphical analyses and discussions elucidate the physical fields after applying the numerical Laplace inverse technique with the effect of some factors like the thermo-electric coupling parameter. Comparisons between some materials like silicon and germanium are being investigated. The stability of main physical quantities with various values of eigenvalues approaches are obtained with the dual solutions of the eigenvalues. Graphical Download : Download high-res image (91KB) Download : Download full-size image

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