Quantum spin Hall effect in monolayer and bilayer TaIrTe 4

Peng-Jie Guo,Xiao-Qin Lu,Wei Ji,Kai Liu,Zhong-Yi Lu
DOI: https://doi.org/10.1103/physrevb.102.041109
IF: 3.7
2020-07-08
Physical Review B
Abstract:Generally, stacking two quantum spin Hall insulators gives rise to a trivial insulator. Here, based on first-principles electronic structure calculations, we confirm that monolayer TaIrTe4 is a quantum spin Hall insulator and remarkably find that bilayer TaIrTe4 is still a quantum spin Hall insulator. Theoretical analysis indicates that the covalentlike interlayer interaction in combination with the small band gap at the time-reversal invariant Γ point results in new band inversion in bilayer TaIrTe4, namely, the emergence of quantum spin Hall phase. Meanwhile, a topological phase transition can be observed by increasing the interlayer distance in bilayer TaIrTe4. Considering that bulk TaIrTe4 is a type-II Weyl semimetal, layered TaIrTe4 thus provides an ideal platform to realize different topological phases at different dimensions.
physics, condensed matter, applied,materials science, multidisciplinary
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