Prediction of dual quantum spin Hall insulator in NbIrTe4 monolayer

Xiangyang Liu,Junwen Lai,Jie Zhan,Tianye Yu,Wujun Shi,Peitao Liu,Xing-Qiu Chen,Yan Sun

2024-06-03

Abstract:Dual quantum spin Hall insulator (QSHI) is a newly discovered topological state in the 2D material TaIrTe4, exhibiting both a traditional Z2 band gap at charge neutrality point and a van Hove singularity (VHS) induced correlated Z2 band gap with weak doping. Inspired by the recent progress in theoretical understanding and experimental measurements, we predicted a promising dual QSHI in the counterpart material of the NbIrTe4 monolayer by first-principles calculations. In addition to the well-known band inversion at the charge neutrality point, two new band inversions were found after CDW phase transition when the chemical potential is near the VHS, one direct and one indirect Z2 band gap. The VHS-induced non-trivial band gap is around 10 meV, much larger than that from TaIrTe4. Furthermore, since the new generated band gap is mainly dominated by the 4d orbitals of Nb, electronic correlation effects should be relatively stronger in NbIrTe4 as compared to TaIrTe4. Therefore, the dual QSHI state in the NbIrTe4 monolayer is expected to be a good platform for investigating the interplay between topology and correlation effects.

Strongly Correlated Electrons

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to predict and verify whether there is a dual quantum spin Hall insulator (dual QSHI) state in the NbIrTe₄ monolayer material. Specifically, the researchers hope to explore whether the NbIrTe₄ monolayer material can form a non - trivial Z₂ band gap near the charge neutral point and the van Hove singularity (VHS), and whether these band gaps can exhibit stronger electron correlation effects.

### Main problems and background

1. **Known properties of TaIrTe₄ material**:
- The TaIrTe₄ monolayer material has been found to be a two - dimensional topological insulator, with a traditional Z₂ band gap at the charge neutral point.
- When the Fermi level moves to the VHS, due to the weak doping effect, two new non - trivial Z₂ band gaps will be generated, corresponding to electron and hole doping cases respectively.

2. **Potential advantages of NbIrTe₄ material**:
- NbIrTe₄ has a similar structure to TaIrTe₄, but the difference between the Nb - 4d orbital and the Ta - 5d orbital near the VHS makes NbIrTe₄ may exhibit stronger electron correlation effects.
- The researchers hope to predict whether there is a similar dual QSHI state in NbIrTe₄ through first - principles calculations and evaluate its potential as a platform for studying the interaction between topology and correlation effects.

### Research objectives

- **Predict the dual QSHI state in NbIrTe₄**: Through theoretical calculations, confirm whether the NbIrTe₄ monolayer material can form a non - trivial Z₂ band gap near the charge neutral point and the VHS.
- **Analyze the electron correlation effect**: Compare the strength of the electron correlation effects in NbIrTe₄ and TaIrTe₄, and explore whether NbIrTe₄ is more suitable as a candidate material for studying strongly correlated topological phenomena.

### Formula representation

The formulas involved in the paper include:

- **Lindhard function for calculating the charge response rate**:
\[
\chi(q)=\sum_k\frac{f_k(1 - f_{k + q})}{\varepsilon_{k + q}-\varepsilon_k + i\delta}
\]
where \( f_k \) is the Fermi - Dirac distribution, \( \varepsilon_k \) is the momentum - dependent energy, and \( \delta \) is the broadening parameter in data processing.

Through the answers to these questions, the researchers expect to provide a theoretical basis for future experiments and further understand the electron correlation effects in topological insulators.