Abstract:Specific geometric morphology and improved crystalline properties are of great significance for the development of materials in micro-nano scale. However, for high-melting molybdenum (Mo), it is difficult to get high-quality structures exhibiting a single-crystalline nature and preconceived morphology simultaneously. In this paper, a pyramid-shaped single-crystalline Mo nanostructure was prepared through a thermal evaporation technique, as well as a series of experimental controls. Based on detailed characterizations, the growth mechanism was demonstrated to follow a sequential process that includes MoO2 decomposition and Mo deposition, single-crystalline islands formation, layered nucleation, and competitive growth. Furthermore, the product was measured to show excellent physical properties. The prepared nanostructures exhibited strong nano-indentation hardness, elastic modulus, and tensile strength in mechanical measurements, which are much higher than those of the Mo bulks. In the measurement of electronic characteristics, the individual structures indicated very good electrical transport properties, with a conductance of ∼0.16 S. The prepared film with an area of 0.02 cm2 showed large-current electron emission properties with a maximum current of 33.6 mA and a current density of 1.68 A cm-2. Optical properties of the structures were measured to show obvious electromagnetic field localization and enhancement, which enabled it to have good surface enhanced Raman scattering (SERS) activity as a substrate material. The corresponding structure-response relationships were further discussed. The reported physical properties profit from the basic features of the Mo nanostructures, including the micro-nano scale, the single-crystalline nature in each grain, as well as the pyramid-shaped top morphology. The findings may provide a potential material for the research and application of micro-nano electrons and photons.

Observation of rapid decay and optical properties of micro-pyramidically grown molybdenum diselenide MoSe 2 crystal

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Pyramid-Shaped Single-Crystalline Nanostructure of Molybdenum with Excellent Mechanical, Electrical, and Optical Properties

Morphology-induced spectral modification of self-assembled WS2 pyramids

Low wavenumber Raman spectroscopy of highly crystalline MoSe2 grown by chemical vapor deposition

Superior Nonlinear Optical Response in Non‐Centrosymmetric Stacking Edge‐Rich Spiral MoTe 2 Nanopyramids

Optical Signal Investigation of Monolayer MoS2 Grown Via Glass-Assisted CVD On Patterned Surfaces

Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride

Large‐Area Structure‐Selective Synthesis of Symmetry‐Broken MoSe2 and Their Broadband Nonlinear Optical Response

Broadband Nonlinear Optical Response of Monolayer MoSe2 under Ultrafast Excitation

Enhanced optical properties of MoSe$_2$ grown by molecular beam epitaxy on hexagonal boron nitride

Investigation of CVD growth of 2D MoS2 on MXene Structures with Photoluminescence Mapping and Fluorescence Lifetime Imaging Microscopy

Photoluminescence Nonuniformity from Self-Seeding Nuclei in CVD-grown Monolayer MoSe2

Probing the Intrinsic Optical Quality of CVD Grown MoS2

Controllable growth of multilayered XSe 2 (X = W and Mo) for nonlinear optical and optoelectronic applications

Transition metal dichalcogenide metaphotonic and self-coupled polaritonic platform grown by chemical vapor deposition

Single Crystalline Metallic Molybdenum Nano-Pyramids: Preparation and High Current Field Emission Properties

Coherent imaging and dynamics of excitons in MoSe$_2$ monolayers epitaxially grown on hexagonal boron nitride

Tuning Excitonic Properties of Monolayer MoS2 with Microsphere Cavity by High-Throughput Chemical Vapor Deposition Method.

Morphological and Optical Characterization of Hydrothermally-Synthesized Two-Dimensional MoS2 Nanosheets

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2