A g-SiC 6 monolayer and its analogs: A new class of tunable Dirac cone materials and novel quantum spin Hall insulators
Tao Yang,Xingang Jiang,Wencai Yi,Xiaomin Cheng,Xiaobing Liu
DOI: https://doi.org/10.1016/j.apsusc.2021.151986
IF: 6.7
2022-03-01
Applied Surface Science
Abstract:Two-dimensional (2D) Dirac cone materials have received wide attention for their advanced properties, such as nearly-zero effective masses and ultrahigh carrier mobility. However, the robust zero bandgap limited their applications in high-performance electronic devices. In this work, we proposed a series of new 2D Dirac cone materials, termed as g-AB 6 monolayers (A = C, Si, and Ge; B = C, Si, Ge, and Sn). We found that the coexistence of s p 2 and s p 3 hybridization would heavily decrease the structural stability, hence the stable g-AB 6 monolayers were only composed of s p 2 or s p 3 hybridized atoms. The electronic calculations revealed that all g-AB 6 monolayers considered are 2D Dirac materials with linear energy dispersions near Fermi level, and they possess high Fermi velocities. Among them, the Fermi velocity of the g-SiC 6 monolayer is up to 7.11 × 10 5 m/s , which is the highest value among the known group IVA binary Dirac materials. Additionally, the Dirac cone of g-SiC 6 monolayer could be modulated by applying moderate in-plane uniaxial or shear strains (<5%), which are much easier than that of graphene and silicene. Moreover, the g-SiC 6 , g-GeSi 6 , g-SiGe 6 , and g-GeSn 6 monolayer have been identified with nontrivial Z 2 topological invariant ( Z 2 = 1), and the g-GeSn 6 monolayer was demonstrated as a room temperature topological insulator due to that spin–orbit coupling opens a large bandgap of 319 meV. Considering that the g-AB 6 monolayers possess excellent dynamical, thermal, and mechanical stability, the g-AB 6 monolayers are a promising candidate for realizing high-speed tunable electronic devices.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films