Abstract:It is well known that the laser diode performance will inevitably deteriorate when the device is heated. It has been a difficult issue to solve to date. In this letter, we are reporting a new solution to improve high-temperature performance of the laser diodes. The device uses a kind of directly-coupled well-wire hybrid quantum confinement (HQC) structure of the active medium based on the InGaAs-GaAs-GaAsP material system. This special HQC structure is constructed based on the strain-driven indium (In)-segregation effect and the growth orientation-dependent on-GaAs multi-atomic step effect. The measurement and analysis for the HQC laser sample show that the carrier leakage loss, the Auger recombination and gain-peak shifting due to heating are reduced in the HQC structure. It therefore increases the optical gain for lasing at high temperature. The power conversion efficiency is enhanced by >57% and the threshold carrier density drops by >24% at T > 360 K, in comparison to the traditional quantum-well laser performance. A higher characteristic temperature of 240 K is obtained as well. It implies the better thermal stability of the HQC laser structure. These achievements show a significant prospect for developing high thermo-optic performance of laser diodes.

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