Abstract:A broad spectral response is highly desirable for radiation detection in modern optoelectronics; however, it still remains a great challenge. Herein, we report a novel ultrabroadband photodetector based on a high-quality tin monoselenide (SnSe) thin film, which is even capable of detecting photons with energies far below its optical band gap. The wafer-size SnSe ultrathin films are epitaxially grown on sodium chloride via the 45° in-plane rotation by employing a sputtering method. The photodetector delivers sensitive detection to ultraviolet–visible–near infrared (UV–Vis–NIR) lights in the photoconductive mode and shows an anomalous response to long-wavelength infrared at room temperature. Under the mid-infrared light of 10.6 μm, the fabricated photodetector exhibits a large photoresponsivity of 0.16 A W–1 with a fast response rate, which is ∼3 orders of magnitude higher than other results. The thermally induced carriers from the photobolometric effect are responsible for the sub-bandgap response. This mechanism is confirmed by a temperature coefficient of resistance of −2.3 to 4.4% K–1 in the film, which is comparable to that of the commercial bolometric detectors. Additionally, the flexible device transferred onto polymer templates further displays high mechanical durability and stability over 200 bending cycles, indicating great potential toward developing wearable optoelectronic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c09561?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c09561</a>.Digital image of the scalable sputtering growth process of the SnSe film on the NaCl substrate; faced-center cubic crystal structure of NaCl; top-view SnSe crystal structure with a distorted rock-salt structure; XRD in-plane Phi scans for SnSe(001) and NaCl(011) planes; photograph images of the exfoliated SnSe ultrathin film with different thicknesses after transferred onto the PET templates; I–V curves under dark and laser illumination with different powers; Rising/falling time as a function of laser powers; I–V curves under the dark and 850 nm laser illumination with different powers; dynamic response curve under the illumination of 0.23 mW; dynamic response curves of the device under 1550 nm laser illumination with different powers; photocurrent as a function of laser powers; I–V curves under the dark and 1550 nm laser illumination with different powers; and noise spectrum of the SnSe photodetector as a function of frequency measured at a constant bias voltage of 20.0 V (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c09561/suppl_file/am0c09561_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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