Current-induced CrI 3 surface spin-flop transition probed by proximity magnetoresistance in Pt
Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi
DOI: https://doi.org/10.1088/2053-1583/ab9dd5
IF: 6.861
2020-07-16
2D Materials
Abstract:By exploiting proximity coupling, we probe the spin state of the surface layers of CrI<sub>3</sub>, a van der Waals magnetic semiconductor, by measuring the induced magnetoresistance (MR) of Pt in Pt/CrI<sub>3</sub> nano-devices. We fabricate the devices with clean and stable interfaces by placing freshly exfoliated CrI<sub>3</sub> flake atop pre-patterned thin Pt strip and encapsulating the Pt/CrI<sub>3</sub> heterostructure with hexagonal boron nitride (hBN) in a protected environment. In devices consisting of a wide range of CrI<sub>3</sub> thicknesses (30–150 nm), we observe that an abrupt upward jump in Pt MR emerge at a 2 T magnetic field applied perpendicularly to the layers when the current density exceeds 2.5 <b>×</b> 10<sup>10</sup> A m<sup>−2</sup>, followed by a gradual decrease over a range of 5 T. These distinct MR features suggest a spin-flop transition which reveals strong antiferromagnetic interlayer coupling in the surface layers of CrI<sub>3</sub>. We study the current dependence by holding the Pt/CrI<sub>3</sub> sample at approximately the same temperature to exclude the joule heating effect, and find that the MR jump increases with the current density, indicating a spin current origin. This spin current effect provides a new route to control spin configurations in insulating antiferromagnets, which is potentially useful for spintronic applications.
materials science, multidisciplinary