Universal scaling law for chiral antiferromagnetism

Shijie Xu,Bingqian Dai,Yuhao Jiang,Danrong Xiong,Houyi Cheng,Lixuan Tai,Meng Tang,Yadong Sun,Yu He,Baolin Yang,Yong Peng,Kang L. Wang,Weisheng Zhao
DOI: https://doi.org/10.1038/s41467-024-46325-5
IF: 16.6
2024-05-03
Nature Communications
Abstract:The chiral antiferromagnetic (AFM) materials, which have been widely investigated due to their rich physics, such as non-zero Berry phase and topology, provide a platform for the development of antiferromagnetic spintronics. Here, we find two distinctive anomalous Hall effect (AHE) contributions in the chiral AFM Mn 3 Pt, originating from a time-reversal symmetry breaking induced intrinsic mechanism and a skew scattering induced topological AHE due to an out-of-plane spin canting with respect to the Kagome plane. We propose a universal AHE scaling law to explain the AHE resistivity ( ) in this chiral magnet, with both a scalar spin chirality (SSC)-induced skew scattering topological AHE term, and non-collinear spin-texture induced intrinsic anomalous Hall term, . We found that and can be effectively modulated by the interfacial electron scattering, exhibiting a linear relation with the inverse film thickness. Moreover, the scaling law can explain the anomalous Hall effect in various chiral magnets and has far-reaching implications for chiral-based spintronics devices.
multidisciplinary sciences
What problem does this paper attempt to address?