Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Coupling-Free Readout Scheme for Memcapacitors With NAND Flash Structure

Memcapacitor Crossbar Array with Charge Trap NAND Flash Structure for Neuromorphic Computing

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Modeling and Analysis of a Large-Scale Memristor Crossbar Array for Neuromorphic Chip

Nanoelectromechanical DRAM for Ultra-Large-scale Integration (ULSI)

Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Electromechanical memcapacitor model offering biologically plausible spiking

Capacitive Synaptor with Overturned Charge Injection for Compute-in-Memory

Ultralow-power in-memory computing based on ferroelectric memcapacitor network

Novel Multi-Bit Non-Uniform Channel Charge Trapping Memory Device with Virtual-Source Nand Flash Array

A 177 TOPS/W, Capacitor-based In-Memory Computing SRAM Macro with Stepwise-Charging/Discharging DACs and Sparsity-Optimized Bitcells for 4-Bit Deep Convolutional Neural Networks.

Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware

Electromechanical memcapacitive neurons for energy-efficient spiking neural networks

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

C3SRAM: An In-Memory-Computing SRAM Macro Based on Robust Capacitive Coupling Computing Mechanism

A Novel Memcapacitive-Synapse Neuron: Bionic Modeling, Complex Dynamics Analysis and Circuit Implementation

Simulation of Charge Trapping Memory with Novel Structures

Memristive Monte Carlo DropConnect crossbar array enabled by device and algorithm co-design

A Novel Small-Signal Ferroelectric Memcapacitor Based Capacitive Computing-In-Memory for Area- and Energy-Efficient Quantized Neural Networks

Josephson-CMOS Hybrid Memory with Ultra-High-speed Interface Circuit

An Optimum Structure of Scalable Capacitors in 3D Crosspoint Memory Technology