Ultra‐High Performance Broadband Self‐Powered Photodetector Based on Modified Sb2Se3/ZnO Heterojunction
Jianpeng Li,Wei Cheng,Jiabin Dong,Zixiu Cao,Shihao Hu,Rutao Meng,Xuejun Xu,Xu Wu,Li Wu,Yi Zhang
DOI: https://doi.org/10.1002/adom.202402264
IF: 9
2024-10-25
Advanced Optical Materials
Abstract:Self‐powered photodetectors (SPPD) spontaneously separate the high‐induced electron–hole pairs and have promising applications. This work reports an ultra‐high‐performance SPPD based on the modification of Sb2Se3/ZnO heterojunction and achieved an excellent responsivity and detectivity of 0.38 A W−1 and 1.40 × 1013 Jones, which is the improved electric conductance of ZnO and confirmed the practicality of preparing imaging arrays. Ascribing to the low power consumption, self‐powered photodetectors (SPPDs) have promising applications in optical communication and photoelectric imaging. Aiming to improve the performance of SPPDs, many efforts have been devoted to exploring the semiconductor‐heterojunction candidates. However, key parameters of SPPDs, especially the responsivity and response time, still lag behind those of the standard photodetectors. Here, with the modification of the transport behavior, ultra‐high‐performance SPPDs are fabricated based on the reported Sb2Se3/ZnO heterojunction. Keeping the broadband detection from infrared to UV region, the SPPDs achieve increased responsivity and detectivity of 0.38 A W−1 and 1.40 × 1013 Jones, respectively. Especially, according to the cut‐off frequency measurements, the response time is improved to 93.5/75.0 ns, which is in a microsecond, even millisecond level for most of the current SPPDs. These studies further reveal the mechanism of the performance modification and indicate that this method can be applied to fabricate imaging arrays. With the combination of the experimental results, we provide an effective method for enhancing the performance of SPPDs toward their applications.
materials science, multidisciplinary,optics