Using the Spark Plasma Sintering System for Fabrication of Advanced Semiconductor Materials

Kamil Kaszyca,Marcin Chmielewski,Bartosz Bucholc,Piotr Błyskun,Fatima Nisar,Jerzy Rojek,Rafał Zybała
DOI: https://doi.org/10.3390/ma17061422
IF: 3.4
2024-03-21
Materials
Abstract:The interest in the Spark Plasma Sintering (SPS) technique has continuously increased over the last few years. This article shows the possibility of the development of an SPS device used for material processing and synthesis in both scientific and industrial applications and aims to present manufacturing methods and the versatility of an SPS device, presenting examples of processing Arc-Melted- (half-Heusler, cobalt triantimonide) and Self-propagating High-temperature Synthesis (SHS)-synthesized semiconductor (bismuth telluride) materials. The SPS system functionality development is presented, the purpose of which was to broaden the knowledge of the nature of SPS processes. This approach enabled the precise design of material sintering processes and also contributed to increasing the repeatability and accuracy of sintering conditions.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
What problem does this paper attempt to address?
The paper attempts to address the issue of demonstrating the versatility and application potential of Spark Plasma Sintering (SPS) technology in the synthesis and processing of semiconductor materials. Specifically, the paper showcases the application of SPS equipment through the following three aspects: 1. **SPS Equipment Expansion**: Researchers upgraded the SPS equipment to achieve more precise control of process parameters and provided detailed information about the sintering process. 2. **SPS Densification of Arc-Melted Materials**: It demonstrates how SPS technology is used to process arc-melted semiconductor materials (such as half-Heusler alloys and cobalt antimonide) and densify them through SPS. 3. **Combining Self-Propagating High-Temperature Synthesis (SHS) with SPS**: It introduces the method of combining SHS with SPS to rapidly synthesize semiconductor materials, such as bismuth telluride-based materials. Through these methods, the paper aims to show that SPS technology can be used not only for material densification but also as a synthesis tool, particularly in the preparation of semiconductor materials. Additionally, the paper explores the impact of different doping elements on the electrical transport properties of materials and how to improve the thermoelectric performance of materials by optimizing process parameters.