Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe 3 GeTe 2 Tailored by a Topological Insulator
Haiyu Wang,Yingjie Liu,Peichen Wu,Wenjie Hou,Yuhao Jiang,Xiaohui Li,Chandan Pandey,Dongdong Chen,Qing Yang,Hangtian Wang,Dahai Wei,Na Lei,Wang Kang,Lianggong Wen,Tianxiao Nie,Weisheng Zhao,Kang L. Wang
DOI: https://doi.org/10.1021/acsnano.0c03152
IF: 17.1
2020-07-20
ACS Nano
Abstract:The emerging two-dimensional ferromagnetic materials present atomic layer thickness and a perfect interface feature, which have become an attractive research direction in the field of spintronics for low power and deep nanoscale integration. However, it has been proven to be extremely challenging to achieve a room-temperature ferromagnetic candidate with well controlled dimensionality, large-scale production, and convenient heterogeneous integration. Here, we report the growth of wafer-scale two-dimensional Fe<sub>3</sub>GeTe<sub>2</sub> integrated with a topological insulator of Bi<sub>2</sub>Te<sub>3</sub> by molecular beam epitaxy, which shows a Curie temperature (<i>T</i><sub><i>c</i></sub>) up to 400 K with perpendicular magnetic anisotropy. Dimensionality-dependent magnetic and magnetotransport measurements find that <i>T</i><sub><i>c</i></sub> increases with decreasing Fe<sub>3</sub>GeTe<sub>2</sub> thickness in the heterostructures, indicating an interfacial engineering effect from Bi<sub>2</sub>Te<sub>3</sub>. The theoretical calculation further proves that the interfacial exchange coupling could significantly enhance the intralayer spin interaction in Fe<sub>3</sub>GeTe<sub>2</sub>, hence giving rise to a higher <i>T</i><sub><i>c</i></sub>. Our results provide great potential for the implementation of high-performance spintronic devices based on two-dimensional ferromagnetic materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c03152?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c03152</a>.Additional experimental details including XRD scan of Bi<sub>2</sub>Te<sub>3</sub>, FGT, Bi<sub>2</sub>Te<sub>3</sub>|FGT films, Hall measurement of 30 nm thick FGT, magnetic measurement of the Bi<sub>2</sub>Te<sub>3</sub>(8)|FGT(5) heterostructure, Hall measurement of the Bi<sub>2</sub>Te<sub>3</sub>|FGT heterostructures below 220 K, magnetic measurement of the FGT(2) and Bi<sub>2</sub>Te<sub>3</sub>(8)|FGT(20) heterostructures, and detailed theoretical calculation of the Bi<sub>2</sub>Te<sub>3</sub>|FGT heterostructures (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c03152/suppl_file/nn0c03152_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology