Optimized-selenization preparation and laser Q-switching characteristics of layered PtSe2

Qianyong Zhang,Jing Wang,Guoshun Li,Jinhu Wang,Xiuhui Yue,Heze Guo,Kai Jiang,Wei Xia,Wenjing Tang
DOI: https://doi.org/10.1088/2053-1591/ad8395
IF: 2.025
2024-10-05
Materials Research Express
Abstract:PtSe2 has high carrier mobility, excellent electrical and optical properties, and high potential in the field of optoelectronic devices. In this paper, the conventional selenization method was optimized and a single-temperature zone preparation was used to prepare large-area and homogeneous PtSe2 thin-film materials on sapphire substrates in a shorter time and at a lower temperature. The prepared sample was characterized by optical microscopy, atomic force microscopy, Raman spectroscopy and Z-scan method. The saturable absorption properties of layered PtSe2 as a passive Q-switch were investigated in a solid-state laser. The results show that the PtSe2 thin film material was synthesized at 400 °C for 1 h to cover the entire one-inch sapphire wafer with a thickness of about 25 nm and the surface roughness is 13.1 nm. The modulation at 1064 nm yielded an output pulse with a maximum repetition frequency of 688.47 kHz, corresponding to a pulse width of 202.5 ns, a peak power of 7.35 W, a single-pulse energy of 1.51 μJ, and a stable pulse train.
materials science, multidisciplinary
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