Abstract:Silicon plays an important role in the mordern photovoltaic and semiconductive industry. In addition, it also arouses great interest in the scientific research due to its structural variety. In experiment, more than thirteen silicon allotropes have been prepared through high pressure or chemical method. Meanwhile, various new silicon structures have been proposed theoretically. The structural variety leads to various electronic properties, including semiconductivity with different band gaps, metallicity, and superconductivity. These electronic properties have a close relationship with the silicon atomic coordination. For example, silicon allotropes with merely four coordinated atoms usually exhibit semiconductive property, while silicon structures with higher coordination number would show metallicity or superconductivity. Thus far, all the synthesized metastable silicon allotropes are composed of four coordinated atoms. Silicon allotropes with higher coordination numbers are mainly high pressure phases which could not be quenched to the ambient condition. One might wonder whether there would be possibility for the preparation of metastable metallic silicon structures. In this paper, a new metallic metastable silicon allotrope has been proposed theoretically using the particle swarm optimization method. This structure was also found when removing the La atoms in α-LaSi5. Its stability was verified by calculating its elastic constants and phonon spectrum. It might be achieved by removing the La atoms from the α-LaSi5 precursor, which is analogous with the recent preparation of Si24. The tunnel-like voids in this structure lead to its lower density than that of the Si-I phase. There are 40% five coordinated silicon atoms, wheras the others are four coordinated. Since silicon has four valence electrons, sp3 hybridized four connected silicon just satisfy the octet rule and would show semiconductivity. The change of coordination number results in a charge transfer between different atoms as indicated by the atomic population. Five connected silicon atoms need more electrons to bonding with other atoms. Electronic band structure calculation indicated that this structure possess metallic property. The metallicity might be due to the delocalization of valence electrons which is induced by the existence of five coordinated atoms. The chemical bonding in this structure includes covalency, metallicity, and ionicity.

The investigation of the physical properties and hydrogenated mechanism of TM5Si4 (TM=Ti, Zr, Hf)

The investigation of the physical properties and hydrogenated mechanism of TM5Si4 (TM1/4Ti, Zr, Hf)

The elastic anisotropy, electronic and thermodynamic properties of TM5Si4 (TM= Sc, Y, Ti, Zr and Hf) silicides from first-principles calculations

Hydrogen adsorption on Ti containing organometallic structures grafted on silsesquioxanes

Exploring of the structural stability, mechanical, electronic and optical properties of hydrogenated RE5Si4 (RE=Sc and Y) from first-principles calculations

Influence of TM Elements on the Mechanical and Thermodynamic Properties of Hf2Si Intermetallics

First-principles Calculations to Investigate Elastic Properties, Ideal Tensile Strength and Electronic Properties of TiSi, Ti5Si3 and Ti5Si4

Investigation of the structural stability, mechanical, and thermodynamic properties of Hf5BSi3 silicide with vacancies defects

First Principles Studies on the Elastic, Thermodynamic Properties and Electronic Structure of Ti15−xMoxSn Compounds

Investigations about the Atomic Structure and Mechanical Behavior of Metallic Glasses after Melt Hydrogenation

Formation Mechanism and Effect on the Mechanical Properties of TiSi Phase for Ti-5Al-5Mo-5Cr-3Nb-2Zr Alloyed by Silicon

Improving the Mechanical Processing of Titanium by Hydrogen Doping: A First-Principles Study

A New Metastable Metallic Silicon Allotrope

Velocity and Stability of Condensed Polymorphic SiH4: A High-Temperature High-Pressure Brillouin Investigation*

Formation Mechanism of Tisi Phase and Silicide Kinds on Microstructure and Mechanical Properties for Ti-5al-5mo-5cr-3nb-2zr Alloyed by Silicon

Investigation on the lattice vibration, mechanical properties, stress-strain behavior and electronic properties of FeTiSi, CoTiSi and NiTiSi intermetallics from a first-principles calculations

An Experimental and Theoretical Study of the Hydrogen Resistance of Ti3SiC2 and Ti3AlC2

Alloying Effect on the Stability of Ti5Si3 from First‐Principles Study

Theoretical Investigation of the Role of Hydrogenation-Induced Strain in Single-Layer H10-Si.

Theoretical predictions of the electronic, optical and thermodynamic properties of the C40-type TMSi2 (TM = V, Nb and Ta) disilicides

First-principles Calculations of Ti3SiC2 and Ti3AlC2 with Hydrogen Interstitial