Development of a neutron imaging sensor using INTPIX4-SOI pixelated silicon devices

Y. Kamiya,T. Miyoshi,H. Iwase,T. Inada,A. Mizushima,Y. Mita,K. Shimazoe,H. Tanaka,I. Kurachi,Y. Arai
DOI: https://doi.org/10.1016/j.nima.2020.164400
2020-11-01
Abstract:<p>We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is measured to be around 1.5% for thermal neutrons. Upper bound of spatial resolution is evaluated to be <span class="math"><math>4.1±0.2μm</math></span> in terms of a standard deviation of the line spread function.</p>
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