Abstract:This study demonstrates the co‐existence of magnetoresistance and memristive properties in MgO‐based tunnel junctions. Devices are suitable for magnetic field sensing applications. As memristors, they show a 2000% resistance change with a quasi‐analog control. Memristive switching can be utilized to suppress and recover spintronic functionalities, paving the way for integrated memristors and spintronic devices in reprogrammable circuits for various applications. Magnetic tunnel junctions (MTJs) and memristors are two key emerging nanotechnologies that attracted significant interest for potential applications at the forefront of the digital revolution, including sensing, data storage, and non‐conventional computation. The co‐integration of these phenomena into a single multifunctional device is an important step toward harnessing the re‐programmability of memristive systems with the high yield and varied functionality of MTJs. This study demonstrates the co‐existence of magnetoresistance and memristive properties on MgO‐based MTJs. These devices show a magnetoresistance with a linear response as a function of a magnetic field and no hysteresis, which are the requirements for good magnetic field sensors, as well as demonstrating a non‐volatile and quasi‐analogue memristive behavior as a function of an applied electrical field down to nanosecond pulses. Furthermore, by doping the oxide barrier, the memristive power consumption is lowered by 20% giving the multi‐functionality of the devices a promising scalability potential. This study also shows that, memristive switching can be reversibly used to completely suppress and recover the spintronic functionalities. These results can pave the way for a seamless co‐integration of memristors and spintronic devices in complex reprogrammable circuits addressing applications such as reprogrammable multifunctional field sensor arrays and neuromorphic computing.

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