Efficient and Stable Gd3Ga5O12:Cr3+ Phosphors for High‐Performance NIR LEDs

Chen Jin,Ruiyang Li,Yongfu Liu,Liangliang Zhang,Jiahua Zhang,Peng Sun,Zhaohua Luo,Jun Jiang
DOI: https://doi.org/10.1002/adom.202300772
IF: 9
2023-06-08
Advanced Optical Materials
Abstract:The Gd3Ga5O12 garnet exhibits a typical cubic structure in the HAADF‐STEM image, with Gd and Ga atoms arranged uniformly. The Ga3+ site is replaced by Cr3+, which shows suitable luminescence for plant lighting, with excitation at 450 nm and emission at 700–760 nm. The high efficiency of the phosphors and LED devices enables extended applications in the field of photophysiotherapy. Cr3+‐activated Gd3Ga5O12 garnet (GGG:Cr3+) near‐infrared (NIR) phosphors have shown promising applications in regulating plant growth. However, the low external quantum efficiency (EQE) results in a wall‐plug efficiency (WPE) of phosphor‐converted light‐emitting diodes (pc)‐LEDs of only ≈15%. Herein, an easy strategy to improve the luminescent properties of the GGG:Cr3+ phosphor is reported. Through optimization of the synthesized technology, the EQE is enhanced to 43.6%. Remarkably, the fabricated pc‐LEDs achieve a WPE as high as 34.3%. These results demonstrate a significant advancement in the development and applications of NIR phosphor materials and NIR pc‐LED devices.
materials science, multidisciplinary,optics
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