Abstract:Two-dimensional(2D)semiconductors offer an atomic thickness that facilitates superior gate field penetration and enables transistors to maintain shrinking with suppressed short-channel effects,thereby being considered as channel materials for future transistors in the post-Moore era.As a member of high-mobility 2D semiconductors,the air-stable Bi2O2Se with a moderate bandgap has drawn significant attention.Distinguished from other 2D materials,Bi2O2Se can be oxidized layer-by-layer to form a high-k native-oxide dielectric,Bi2SeO5,with an atomically sharp interface,similar to Si/SiO2 in the semiconductor industry.These characteristics make Bi2O2Se an ideal material platform for fabricating various devices with excellent performance,such as transistors,thermoelectrics,optoelectronics,sensors,flexible devices and memory devices.To realize advanced applications of 2D Bi2O2Se,it is essential to develop scalable and high-quality preparation methods with relatively low cost.Chemical vapor deposition(CVD)has shown promise in meeting these requirements.Over the past years,CVD has been widely used to synthesize 2D Bi2O2Se despite some remaining challenges.In this review,we summarize the recent progress in the controlled growth of 2D Bi2O2Se via the CVD method.We begin by introducing the crystal structure and properties of Bi2O2Se.Next,we focus on the morphology control of 2D Bi2O2Se,including various nucleation modes and different dimensionalities by carefully manipulating the CVD process.In terms of nucleation modes,in-plane and vertical epitaxial growth of Bi2O2Se,achieved by controlling the interaction between epitaxial layer and substrate,are reviewed.Wafer-scale continuous Bi2O2Se film facilitates the device integration while vertical 2D fins pave the way for fabricating high-performance fin field-effect-transistors(FinFET).As for the dimensionality control,the transition from 2D nanoplates to 1D nanoribbons is investigated.Parameters such as precursor ratio,growth temperature and types of catalyst play a key role in such transition.We then discuss the construction of ordered arrays of Bi2O2Se with the above morphology by selective growth and post treatment for potential device integration.In addition,we highlight the electrical quality improvement of the grown material via defect control and strain release.For example,both the Se poor growth condition and the out-of-plane strain-free growth contribute to higher mobility of Bi2O2Se.Lastly,we propose potential strategies for precise control of Bi2O2Se structures and quality.In order to meet the demands of advanced electronic applications,more efforts are expected to made to achieve uniform,transferable and site-specific preparation of high-quality single-crystal Bi2O2Se on a large scale.

Direct Growth of Magnetic Non-van der Waals Cr 2 X 3 (X = S, Se, and Te) on SiO 2 /Si Substrates through the Promotion of KOH

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Epitaxial Growth of Large-Grain-size Ferromagnetic Monolayer CrI3 for Valley Zeeman Splitting Enhancement

Epitaxial Growth of Large‐Scale 2D CrTe2 Films on Amorphous Silicon Wafers With Low Thermal Budget

Van der Waals Epitaxial Growth of 2D Layered Room‐Temperature Ferromagnetic CrS2

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Controlled Growth and Thickness‐Dependent Conduction‐Type Transition of 2D Ferrimagnetic Cr2S3 Semiconductors

Controlled Growth and Thickness-Dependent Conduction-Type Transition of 2D Ferrimagnetic Cr 2 S 3 Semiconductors.

Space-confined CVD Growth of 2D-Mos2 Crystals with Tunable Dimensionality Via Adjusting Growth Conditions

Stoichiometry-Tunable Synthesis and Magnetic Property Exploration of Two-Dimensional Chromium Selenides

Van der Waals epitaxial growth of air-stable CrSe2 nanosheets with thickness-tunable magnetic order

Controllable CVD Growth of 2D Cr 5 Te 8 Nanosheets with Thickness-Dependent Magnetic Domains

Controllable Synthesis of Submillimeter Ultrathin 2D Ferromagnetic Cr5Te8 Nanosheets by GaTe-Assisted CVD

Controllable CVD-Growth of 2D Cr5Te8 Nanosheets with Thickness-Dependent Magnetic Domains

Epitaxial growth of quasi-2D van der Waals ferromagnets on crystalline substrates

2D growth of high-quality magnetic CuCr2Se4 crystals with a high Curie temperature

Controllable phase transition of two-dimensional ferromagnetic chromium telluride thin films grown by molecular beam epitaxy

Diverse electronic and magnetic properties of CrS2 enabling novel strain-controlled 2D lateral heterostructure spintronic devices

Chemical Vapor Deposition Growth of High-Mobility 2D Semiconductor Bi2O2Se:Controllability and Material Quality

Controllable Growth of 2D V3S5 Single Crystal by Chemical Vapor Deposition

Epitaxial growth and room-temperature ferromagnetism of quasi-2D layered Cr<sub>4</sub>Te<sub>5</sub> thin film