2D BiSeI Nanosheets for Broadband Self‐powered Photoelectrochemical Photodetector
Lei Xu,Mengtong Yang,Qidong Lu,Yuxin Ren,Yi Chen,Jinjia Guo,Mingjie Cai,Xiao Miao,Feng Teng,Haibo Fan,Chunmei Zhang,Xuexia He,Peng Hu
DOI: https://doi.org/10.1002/pssr.202300183
2023-06-27
physica status solidi (RRL) - Rapid Research Letters
Abstract:Broadband photodetectors are essential for the integrated design of next‐generation optical detector devices. Ternary two‐dimensional bismuth sulfide semiconductor (BiXI, X=S, Se, Te) is an ideal candidate for broadband photoelectric detection due to its narrow band gap and excellent electrical transport performance. Here, BiSeI was grown by chemical vapor transport (CVT) method and used in photoelectrochemical (PEC) photodetection. The PEC‐type photodetector based on BiSeI nanosheets has a broadband detection ranging from 350 nm to 900 nm, displaying a high responsivity of 2.88 mA W‐1, a high detectivity of 1.10×1010 Jones and a fast response time of 7/16 ms at a bias voltage of 0.5 V. Furthermore, the device also exhibits a negligible current density loss after three months, which indicates that it has good stability against air and moisture. In addition, the photodetector can work without bias potential, indicating that it is a good self‐powered device. The results demonstrate that BiSeI is a potential material in self‐powered PEC photodetector. This article is protected by copyright. All rights reserved.
physics, condensed matter, applied,materials science, multidisciplinary