Hydrogen absorption boosting in mildly annealed bulk MoS2

Jairo Obando-Guevara,Álvaro González-García,Marcin Rosmus,Natalia Olszowska,César González,Guillermo Morón,Jun Fuji,Antonio Tejeda,Miguel Ángel González-Barrio,Arantzazu Mascaraque
DOI: https://doi.org/10.1039/d4ta02570a
IF: 11.9
2024-07-20
Journal of Materials Chemistry A
Abstract:The basal plane of MoS 2 has been considered a potential source of active catalytic sites in hydrogen absorption. Sulfur vacancies can activate the inert basal plane of MoS 2 , although achieving sufficient catalytic efficiency requires a high defect concentration of about 12 %. We investigate the effect of defects on the hydrogen adsorption on the basal plane of MoS 2 using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). Annealing at mild temperatures effectively introduces single sulfur vacancy ( V S ) defects, as observed by electronic structure changes that are in excellent agreement with DFT calculations for a V S concentration of ∽ 4 %. Subsequent exposure to molecular hydrogen showed that higher hydrogen pressure facilitates hydrogen adsorption, as predicted by theoretical calculations. Interestingly, hydrogen exposure restores the electronic structure to a state similar to that of pristine MoS 2 . These results suggest that the controlled introduction of V S defects via annealing is a promising strategy for enhancing hydrogen adsorption on MoS 2 , paving the way for its potential use in future catalytic applications.
materials science, multidisciplinary,chemistry, physical,energy & fuels
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