Salt-Induced High-Density Vacancy-Rich 2D MoS2 for Efficient Hydrogen Evolution

Ping Man,Shan Jiang,Ka Ho Leung,Ka Hei Lai,Zhiqiang Guang,Honglin Chen,Lingli Huang,Tianren Chen,Shan Gao,Yung-Kang Peng,Chun-Sing Lee,Qingming Deng,Jiong Zhao,Thuc Hue Ly

DOI: https://doi.org/10.1002/adma.202304808

IF: 29.4

2024-01-01

Advanced Materials

Abstract:Emerging non-noble metal 2D catalysts, such as molybdenum disulfide (MoS2), hold great promise in hydrogen evolution reactions. The sulfur vacancy is recognized as a key defect type that can activate the inert basal plane to improve the catalytic performance. Unfortunately, the method of introducing sulfur vacancies is limited and requires costly post-treatment processes. Here, a novel salt-assisted chemical vapor deposition (CVD) method is demonstrated for synthesizing ultrahigh-density vacancy-rich 2H-MoS2, with a controllable sulfur vacancy density of up to 3.35 x 10(14) cm(-2). This approach involves a pre-sprayed potassium chloridepromoter on the growth substrate. The generation of such defects is closely related to ion adsorption in the growth process, the unstable MoS2-K-H2O triggers the formation of sulfur vacancies during the subsequent transfer process, and it is more controllable and nondestructive when compared to traditional post-treatment methods. The vacancy-rich monolayer MoS2 exhibits exceptional catalytic activity based on the microcell measurements, with an overpotential of & AP;158.8 mV (100 mA cm(-2)) and a Tafel slope of 54.3 mV dec(-1) in 0.5 m H2SO4 electrolyte. These results indicate a promising opportunity for modulating sulfur vacancy defects in MoS2 using salt-assisted CVD growth. This approach represents a significant leap toward achieving better control over the catalytic performances of 2D materials.