Abstract:Emerging non‐noble metal two‐dimensional catalysts, such as molybdenum disulfide (MoS2), hold great promise in hydrogen evolution reactions. To enhance the intrinsically low activity of the basal plane structures of MoS2, various phase, strain and defect engineering approaches have been proposed. Sulfur vacancy is recognized as a key type of defect that impacts the catalytic performance. Unfortunately, the method of introducing sulfur vacancies is limited and requires costly post‐treatment processes. Here, we demonstrate a novel salt‐assisted chemical vapor deposition (CVD) method for synthesizing ultra‐high‐density vacancy‐rich 2H‐MoS2, with a controllable sulfur vacancy density of up to 3.35 × 1014 cm−2. Our approach involves pre‐sprayed potassium chloride (KCl) promoter on the growth substrate. The generation of such defects is closely related to ion adsorption in the growth process, the unstable MoS2‐K‐H2O triggers the formation of sulfur vacancy during the subsequent transfer process. Our novel approach to directly implant high density S vacancies in MoS2 during growth is more controllable and nondestructive when compared to the traditional post‐treatment methods. The vacancy‐rich monolayer MoS2 exhibits exceptional catalytic activity based on the microcell measurements, with an overpotential of ∼ 158.8 mV (100 mA cm−2) and a Tafel slope of 54.3 mV dec−1 in 0.5 M H2SO4 electrolyte. Our results indicate a promising opportunity for modulating pure sulfur vacancy defects in MoS2 using salt‐assisted CVD growth. This approach represents a significant leap towards achieving better control over the catalytic performances of 2D materials. This article is protected by copyright. All rights reserved

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