Ultra-Wideband Transformer Feedback Monolithic Microwave Integrated Circuit Power Amplifier Design on 0.25 μm GaN Process

Jialin Luo,Yihui Fan,Jing Wan,Xuming Sun,Xiaoxin Liang

DOI: https://doi.org/10.3390/mi15040546

IF: 3.4

2024-04-19

Micromachines

Abstract:This paper presents an ultra-wideband transformer feedback (TFB) monolithic microwave integrated circuit (MMIC) power amplifier (PA) developed using a 0.25 μm gallium nitride (GaN) process. To broaden the bandwidth, a drain-to-gate TFB technique is employed in this PA design, achieving a 117% relative −3 dB bandwidth, extending from 5.4 GHz to 20.3 GHz. At a 28 V supply, the designed PA circuit achieves an output power of 25.5 dBm and a 14 dB small-signal gain in the frequency range of 6 to 19 GHz. Within the 6 to 19 GHz frequency range, the small-signal gain exhibits a flatness of less than 0.78 dB. The PA chip occupies an area of 1.571 mm2. This work is the first to design a power amplifier with on-chip transformer feedback in a compound semiconductor MMIC process, and it enables the use of the widest bandwidth power amplifier on-chip transformer matching network.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied

What problem does this paper attempt to address?

This paper mainly discusses the design of wideband matching power amplifiers using Ultra-Wideband Transformer Feedback (TFB) monolithic microwave integrated circuit (MMIC). In the 0.25-micron Gallium Nitride (GaN) process, researchers used the TFB technology from source to drain to achieve a relative -3dB bandwidth of 117%, covering a range from 5.4 GHz to 20.3 GHz. The designed power amplifier operates at 28 V power supply and has an output power of 25.5 dBm and a small signal gain of 14 dB in the frequency range of 6 to 19 GHz, with gain flatness less than 0.78 dB. This is the first power amplifier with on-chip transformer feedback designed in compound semiconductor MMIC process and has the widest bandwidth of on-chip transformer matching network.

The paper mentions that with the increase in data transmission volume and transmission rate requirements in the 5G era, wideband systems are becoming increasingly important. Traditional methods such as reactive matching, transformer matching, and distributed topology face challenges in designing wideband power amplifiers, especially when the relative bandwidth exceeds 40%. TFB technology can widen the bandwidth and reduce noise by balancing the gate-drain capacitance of the transistors. The paper proposes a TFB method based on distributed transformer modeling theory to achieve ultra-wideband performance.

The paper also compares the characteristics of different semiconductor materials and highlights the advantages of GaN material in high voltage, high electron saturation velocity, and high thermal conductivity, making it suitable for RF applications. In addition, the paper analyzes the impact of transformer design parameters on performance and how TFB technology optimizes amplifier performance by adjusting input impedance and coupling coefficient, while sacrificing some gain in exchange for flatter frequency response and wider bandwidth. Finally, the paper describes circuit design and measurement results, and provides outlook for future work.