Reducing Hole Trap Density in Sn‐Pb Perovskite Solar Cells via Molecular Phenylhydrazine

Kyu-Woong Yeom,Nam-Gyu Park
DOI: https://doi.org/10.1002/solr.202400068
IF: 9.1726
2024-02-21
Solar RRL
Abstract:Narrow‐band gap Sn‐Pb alloyed perovskite is potential for a bottom cell in perovskite tandem solar cells. However, Sn‐contained perovskites tend to be readily oxidized in air atmosphere, which has ill influence on stability and photovoltaic performance. Here, we report on a method to suppress oxidation of divalent tin via post‐treatment of perovskite film with phenylhydrazine. Phenylhydrazine‐treated FA0.5MA0.5Pb0.5Sn0.5I3 perovskite films effectively reduced the hole traps caused by the oxidation of Sn2+ on the perovskite surfaces. In addition, surface energetics were well aligned by the post‐treatment, which is beneficial for voltage gain and charge transport. As a result, power conversion efficiency (PCE) was increased from 18.16% to 20.67% after post‐treatment due mainly to the significant improvement of open‐circuit voltage from 0.75 V to 0.83 V. Furthermore, the device stability was improved, where 91.67% of initial PCE was maintained after 1000 hours. This article is protected by copyright. All rights reserved.
energy & fuels,materials science, multidisciplinary
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