Suppressing Bulk and Interfacial Recombination Losses in Sn–Pb Perovskites for Efficient Printable Low‐Bandgap Photovoltaic Devices

Hongwei Lai,Jinlong Hu,Xinming Zhou,Linliang Cai,Qingchen He,Chaoran Chen,Zhenhua Xu,Xiudi Xiao,Donghui Lan,Yaohua Mai,Fei Guo

DOI: https://doi.org/10.1002/solr.202200619

IF: 9.1726

2022-08-29

Solar RRL

Abstract:A synergistic bulk passivation and interface modification strategy is developed for the fabrication of high‐quality tin–lead mixed perovskite films (1.27 eV) and efficient solar devices by blade‐coating. Owing to the significantly suppressed nonradiative charge recombination, the prepared solar cells give a high efficiency of 19.06% with an impressive open‐circuit voltage of 0.837 V. Thin films of tin–lead alloyed perovskites are drawing growing attention, mainly owing to their tunable bandgaps in delivering efficient single‐ and multi‐junction photovoltaic devices. The rapid efficiency advancement of Sn–Pb perovskite devices has been dependent primarily on improving the crystal quality of perovskite films via retarding oxidation of Sn2+. Herein, it is demonstrated that in addition to obtaining high‐quality Sn–Pb perovskite thin films, reducing nonradiative recombination losses at interfaces is equally important for realizing efficient solar cells. An aromatic amine is first introduced to passivate the grain boundary in printed Sn–Pb perovskite films, which boosts the open‐circuit voltage (V OC) of the solar devices from 700 to 766 mV. Further enhancement of the V OC to 814 mV and finally to 837 mV is realized by forming a 2D/3D‐layered heterojunction and doping the hole extraction layer with a polyelectrolyte, respectively, benefiting from the largely suppressed nonradiative recombination losses at interfaces. Eventually, the mixed Sn–Pb perovskite devices with a bandgap of ≈1.27 eV yield a high efficiency of 19.06% and in parallel show improved shelf and light‐soaking stability.

energy & fuels,materials science, multidisciplinary