High κ and large positive τf in the low temperature sintering BaNb2V2O11 ceramics

Chia-Chien Wu,Cheng-Liang Huang
DOI: https://doi.org/10.1007/s10854-024-13902-9
2024-11-28
Journal of Materials Science Materials in Electronics
Abstract:The BaNb 2 V 2 O 11 microwave dielectric material, synthesized using a solid-state process, was proposed for utilization as a temperature compensator in LTCC applications. XRD analysis indicated that all samples revealed a trigonal structure of the BaNb 2 V 2 O 11 phase with the R3̅m (166) space group. Influence of lattice energy and bond energy on the dielectric characteristics were investigated. Correlation between the Full Width at Half Maximum (FWHM) of the primary Raman peak at 917 cm− 1 and the Q × f value was also analyzed. The sample sintered at 860 °C exhibited remarkable microwave dielectric properties, including a high relative permittivity ( ε r ) of 88.7, a high Q × f value of 2100 GHz, and a significantly positive temperature coefficient of resonant frequency ( τ f ) of + 602.4 ppm/°C. This notably large positive τ f value makes it an effective τ f compensator. Furthermore, the high ε r value indicates its suitability for use in decoupling devices or as dielectric resonators in 5G base stations.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
What problem does this paper attempt to address?