Growth of p/n-type BiFeO3 thin films for construction of a bilayer p-n junction for photodegradation of organic pollutants

Hao-Yun Tu,Xiaoding Qi

DOI: https://doi.org/10.1039/d4ta01615g

IF: 11.9

2024-04-25

Journal of Materials Chemistry A

Abstract:Thin films of BiFeO 3 (BFO) were grown on LaNiO 3 buffered glass substrate by RF magnetron sputtering. The deposition parameters were tailored for the films to exhibit either n-type or p-type conductivity, which allowed the fabrication of a BFO p-n junction for photocatalytic application. Both p/n-type films contained oxygen vacancies with the atomic fraction being 7.7% and 2.0%, respectively. The p-type conductivity was correlated to the positively charged oxygen vacancies, which occurred in higher numbers in the p-type films due to charge compensation for a higher Fe 2+ /Fe 3+ ratio. In contrast, more oxygen vacancies in the n-type films were the neutral oxygen vacancies, which were shallow electron donors. The n-type films showed a bandgap of 2.57 eV, which was slightly larger than the p-type films (2.50 eV). The band alignment between the p/n-type films was established based on the results of ultraviolet photoelectron spectroscopy. The Fermi level of both p/n-type films was close to the middle of bandgap as a result of low carrier concentrations, which were consistent with the carrier concentrations calculated from the slope of Mott-Schottky plot. The BFO p-n junction allowed a fast separation of photo-generated charge carriers as confirmed by the observation of a great increase in photocurrent, which led to a great improvement in photodegradation of methylene blue (MB). The BFO p-n junction could degrade 95.5% MB in 120 min (10×10 mm 2 film in 20 ml of 10 mg/L MB) and the degradation efficiency remained over 90.3% after five times of reuse.

materials science, multidisciplinary,chemistry, physical,energy & fuels