NH4PF6 assisted buried interface defect passivation for planar perovskite solar cells with efficiency exceeding 21%

Xing-Dong Ding,Xiao-Wen Zhou,Jin-Wei Meng,Hao-Xin Wang,Tai Wu,Yong Hua,Cheng Chen,Ming Cheng
DOI: https://doi.org/10.1007/s12598-023-02394-x
IF: 6.318
2023-09-03
Rare Metals
Abstract:The buried interface defects severely affect the further enhancements of efficiency and stability of SnO 2 -based planar perovskite solar cells (PSCs). To well tackle this problem, we propose a passivation strategy employing NH 4 PF 6 to modify the buried interface of perovskite layer ((FAPbI 3 ) 0.85 (MAPbBr 3 ) 0.15 composition) in planar PSCs. After introducing NH 4 PF 6 , the oxygen defects on the surface of SnO 2 film are greatly restricted due to the coordinate interaction between fluorine atoms (F) in PF 6 − and undercoordinated Sn 4+ . Meanwhile, the hydrogen bonding interaction (N–H⋯I) between NH 4 PF 6 and PbI 2 can passivate the non-radiative charge recombination sites, significantly optimizing the quality of perovskite film, as well as the charge transfer process at the SnO 2 /perovskite interface. As a result, the NH 4 PF 6 -modified PSC obtains a champion power conversion efficiency (PCE) of 21.11% superior to the reference device (18.46%), and the device with an active area of 1 cm 2 achieves a PCE as high as 17.38%. Furthermore, the unencapsulated NH 4 PF 6 -modified PSCs show good humidity stability and retain about 80% of the initial PCE after 1080 h aging at the relative humidity (RH) of 35% ± 5%.
materials science, multidisciplinary,metallurgy & metallurgical engineering
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