Abstract:Growing layer‐tunable and transfer‐free graphene films directly on device‐compatible substrates using ion implantation, fabricated photodetectors, field‐effect transistors, and heating devices. Direct synthesis of layer‐tunable and transfer‐free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two‐step process: a high‐quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer transfer onto device‐relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual‐metal smart Janus substrate for a diffusion‐limiting graphene formation to directly synthesize large area, high quality, and layer‐tunable graphene films on arbitrary substrates without the post‐synthesis layer transfer process. Carbon (C) ion implantation was performed on Cu–Ni film deposited on a variety of device‐relevant substrates. A well‐controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C‐atoms (1 monolayer ~4 × 1015 C‐atoms/cm2). Upon thermal annealing to promote Cu‐Ni alloying, the pre‐implanted C‐atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C‐solubility in Cu. As a result, the expelled C‐atoms precipitate into a graphene structure at the interface facilitated by the Cu‐like alloy catalysis. After removing the alloyed Cu‐like surface layer, the layer‐tunable graphene on the desired substrate is directly realized. The layer‐selectivity, high quality, and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films. Molecular dynamics (MD) simulations using the reactive force field (ReaxFF) were performed to elucidate the graphene formation mechanisms in this novel synthesis approach. With the wide use of ion implantation technology in the microelectronics industry, this novel graphene synthesis approach with precise layer‐tunability and transfer‐free processing has the promise to advance efficient graphene‐device manufacturing and expedite their versatile applications in many fields.

A graphite enclosure assisted synthesis of high-quality patterned graphene on 6H–SiC by ion implantation

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

Graphene Masks As Passivation Layers in the Electrochemical Etching of Silicon

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Ion implantation assisted synthesis of graphene on various dielectric substrates

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Direct Synthesis of High-Quality Nitrogen-Doped Graphene Via Ion Implantation

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

High-Quality Graphene Synthesis on Amorphous SiC Through A Rapid Thermal Treatment

Epitaxial Growth of Graphene on SiC by Thermal Shock Annealing Within Seconds

A facile approach to direct growth of layer-tunable graphene on Ge substrate

Fabrication and Characterization of Graphene Derived from SiC

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

Insulating SiO 2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Direct synthesis of nanopatterned epitaxial graphene on silicon carbide

Insulating SiO2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Interfacial monolayer graphene growth on arbitrary substrate by nickel-assisted ion implantation

Preparation of Graphene on Different-Polarity 6H-Sic Substrates and the Study of Their Electronic Structures

A Strategy to Prepare High-Quality Monocrystalline Graphene: Inducing Graphene Growth with Seeding Chemical Vapor Deposition and Its Mechanism.

Controlled fabrication of freestanding monolayer SiC by electron irradiation