Abstract:Abstract Ultrafast carrier relaxation in the 2D topological insulator (TI) Bi 2 Se 3 [gapped Dirac surface states (SS)] and how it inherits ultrafast relaxation in the 3D TI Bi 2 Se 3 (gapless Dirac SS) remains a challenge for developing new optoelectronic devices based on these materials. Here ultrashort (~ 100 fs) pumping pulses of ~ 340 nm wavelength (~ 3.65 eV photon energy) were applied to study ultrafast electron relaxation in the 2D TI Bi 2 Se 3 films with a thickness of 2 and 5 quintuple layers (~ 2 and ~ 5 nm, respectively) using transient absorption (TA) spectroscopy in the ultraviolet–visible spectral region (1.65–3.9 eV). The negative and positive contributions of TA spectra were attributed to absorption bleaching that mostly occurs in the bulk states and to the inverse bremsstrahlung type free carrier absorption in the gapped Dirac SS, respectively. Owing to this direct and selective access to the bulk and surface carrier dynamics, we were able to monitor coherent longitudinal optical (LO) phonon oscillations, which were successively launched in the bulk and surface states by the front of the relaxing electron population within the LO-phonon cascade emission. We have also recognized the coherent surface-to-bulk vibrational coupling that appears through the phase-dependent amplitude variations of coherent LO-phonon oscillations. This unique behavior manifests itself predominantly for the topologically trivial insulator phase of the 2D TI Bi 2 Se 3 (2 nm thick film) in the photon energy range (~ 2.0–2.25 eV) where efficient energy exchange between the bulk and surface states occurs. We also found that the coherent surface-to-bulk vibrational coupling significantly weakens with increasing both the Bi 2 Se 3 film thickness and pumping power.

Terahertz relaxation dynamics of a two-dimensional InSe multilayer

Terahertz Carrier Dynamics in Epitaxial Layered Ε-Inse

Photo-excited Carrier Relaxation Dynamics in Two-Dimensional InSe Flakes.

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals

Coherent Dynamics of Charge Carriers in γ-InSe Revealed by Ultrafast Spectroscopy

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Terahertz Probe of Photoexcited Carrier Dynamics in the Dirac Semimetal Cd3As2

Excitation-density and Excess-Energy Dependence of Ultrafast Dynamics of Photoexcited Carriers in Intrinsic Bulk CdTe

Characterization of charge-carrier dynamics at the Bi2Se3/MgF2interface by multiphoton pumped UV-Vis transient absorption spectroscopy

Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy

Dynamics of exciton energy renormalization in monolayer transition metal disulfides

Ultrafast Carrier Dynamics and Bandgap Renormalization in Layered PtSe 2

Electron spin relaxation in intrinsic bulk InP semiconductor

Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure

Semiconductorlike Photocarrier Dynamics in Dirac-semimetal Cd3As2 Films Probed with Transient Terahertz Spectroscopy

Inse Monolayer: Synthesis, Structure And Ultra-High Second-Harmonic Generation

Enhancement of Electronic and Optoelectronic Performance of the InSe Multilayer by Surface Transfer Engineering

Clarifying Ultrafast Carrier Dynamics in Ultrathin Films of the Topological Insulator Bi 2 Se 3 Using Transient Absorption Spectroscopy

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Reveal long-lived hot electrons in 2D indium selenide and ferroelectric-regulated carrier dynamics of InSe/α-In2Se3/InSe heterostructure