Controlled growth of single-crystalline 2D p-type semiconductor α-MnSe for broadband photodetector

Meijie Zhu,Xiaojian Wang,Zuoquan Tan,Kai Li,Qingliang Feng,Li Chen,Le Wang
DOI: https://doi.org/10.1016/j.rinp.2024.107558
IF: 4.565
2024-03-15
Results in Physics
Abstract:As a wide band-gap p-type semiconductor, α-MnSe has been expected to make up for the scarcity of two-dimensional (2D) semiconductor materials, which is crucial for the construction of multifunctional and miniaturized p-n junctions. Herein, we report the synthesis of single crystalline α-MnSe with its domain size, thickness and coverage controlled by hydrogen modulated CVD. The back-gate FET device was fabricated to study the electrical properties of α-MnSe. Moreover, the α-MnSe-based photodetector exhibits a broadband photo-response ranging from 532 nm to 980 nm with response times as low as ∼ 20 ms, comparable to most 2D materials.
physics, multidisciplinary,materials science
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