Abstract:This study demonstrates both low‐resistance contacts and extension doping for p‐type monolayer WSe2 field‐effect transistors. The insertion of an amorphous monolayer WOxSey under evaporated metal contacts reduces the contact resistance by over an order of magnitude, achieving a low value of 1.2 ± 0.3 kΩ μm for monolayer WSe2. A short‐channel monolayer WSe2 transistor with doped extensions reaches a maximum drain current of 154 μA μm−1 with a high on/off ratio of 107. Source/Drain extension doping is crucial for minimizing the series resistance of the ungated channel and reducing the contact resistance of field‐effect transistors (FETs) in complementary metal–oxide–semiconductor (CMOS) technology. 2D semiconductors, such as MoS2 and WSe2, are promising channel materials for beyond‐silicon CMOS. A key challenge is to achieve extension doping for 2D monolayer FETs without damaging the atomically thin material. This work demonstrates extension doping with low‐resistance contacts for monolayer WSe2 p‐FETs. Self‐limiting oxidation transforms a bilayer WSe2 into a hetero‐bilayer of a high‐work‐function WOxSey on a monolayer WSe2. Then, damage‐free nanolithography defines an undoped nano‐channel, preserving the high on‐current of WOxSey‐doped FETs while significantly improving their on/off ratio. The insertion of an amorphous WOxSey interlayer under the contacts achieves record‐low contact resistances for monolayer WSe2 over a hole density range of 1012 to 1013 cm−2 (1.2 ± 0.3 kΩ μm at 1013 cm−2). The WOxSey‐doped extension exhibits a sheet resistance as low as 10 ± 1 kΩ □−1. Monolayer WSe2 p‐FETs with sub‐50 nm channel lengths reach a maximum drain current of 154 μA μm−1 with an on/off ratio of 107–108. These results define strategies for nanometer‐scale selective‐area doping in 2D FETs and other 2D architectures.

P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Low Resistance Contact to P-Type Monolayer WSe2

Ambipolar and Robust WSe<sub>2</sub> Field-Effect Transistors Utilizing Self-Assembled Edge Oxides

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Ohmic MXene Contacts for Symmetric P- and N-Type Monolayer WSe2 Schottky Barrier Field-Effect Transistors

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Ohmic Contacts Between Monolayer WSe2 and Two-Dimensional Titanium Carbides

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

A Computational Study of Monolayer Hexagonal WTe2 to Metal Interfaces

P-type electrical contacts for two-dimensional transition metal dichalcogenides

Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

1T Phase As an Efficient Hole Injection Layer to TMDs Transistors: a Universal Approach to Achieve P-Type Contacts

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Controlled Fabrication of Metallic MoO2 Nanosheets Towards High-Performance P-Type 2D Transistors.